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28.4.11.8 Program Section Command
The Program Section operation programs the data found in the section program buffer to
previously erased locations in the flash memory using an embedded algorithm. Data is
preloaded into the section program buffer by writing to the FlexRAM while it is set to
function as traditional RAM (see Flash Sector Programming).
The section program buffer is limited to the lower half of the RAM. Data written to the
upper half of the RAM is ignored and may be overwritten during Program Section
command execution.
CAUTION
A flash memory location must be in the erased state before
being programmed. Cumulative programming of bits (back-to-
back program operations without an intervening erase) within a
flash memory location is not allowed. Re-programming of
existing 0s to 0 is not allowed as this overstresses the device.
Table 28-52. Program Section Command FCCOB Requirements (P-Flash )
FCCOB Number FCCOB Contents [7:0]
0 0x0B (PGMSEC)
1 Flash address [23:16]
2 Flash address [15:8]
3 Flash address [7:0]
1
4 Number of phrases to program [15:8]
5 Number of phrases to program [7:0]
1. Must be phrase aligned (Flash address [2:0] = 000).
Table 28-53. Program Section Command FCCOB Requirements (D-Flash)
FCCOB Number FCCOB Contents [7:0]
0 0x0B (PGMSEC)
1 Flash address [23:16]
2 Flash address [15:8]
3 Flash address [7:0]
1
4 Number of longwords to program [15:8]
5 Number of longwords to program [7:0]
1. Must be longword aligned (Flash address [1:0] = 00).
After clearing CCIF to launch the Program Section command, the flash memory module
blocks access to the FlexRAM and programs the data residing in the section program
buffer into the flash memory starting at the flash address provided.
Functional Description
K20 Sub-Family Reference Manual, Rev. 1.1, Dec 2012
628
Preliminary
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