Information
28.4.10.8 Program Section Command
The Program Section operation programs the data found in the section program buffer to
previously erased locations in the flash memory using an embedded algorithm. Data is
preloaded into the section program buffer (see Flash Sector Programming).
The section program buffer is limited to the lower half of the RAM. Data written to the
upper half of the RAM is ignored and may be overwritten during Program Section
command execution.
CAUTION
A flash memory location must be in the erased state before
being programmed. Cumulative programming of bits (back-to-
back program operations without an intervening erase) within a
flash memory location is not allowed. Re-programming of
existing 0s to 0 is not allowed as this overstresses the device.
Table 28-45. Program Section Command FCCOB Requirements
FCCOB Number FCCOB Contents [7:0]
0 0x0B (PGMSEC)
1 Flash address [23:16]
2 Flash address [15:8]
3 Flash address [7:0]
1
4 Number of phrases to program [15:8]
5 Number of phrases to program [7:0]
1. Must be phrase aligned (Flash address [2:0] = 000).
After clearing CCIF to launch the Program Section command, the FTFL blocks access to
the programming acceleration RAM and programs the data residing in the section
program buffer into the flash memory starting at the flash address provided.
The starting address must be unprotected (see the description of the FPROT registers) to
permit execution of the Program Section operation. The swap indicator address in each
program flash block is implicitly protected from erase. If the swap indicator address is
encountered during the Program Section operation, it is bypassed without setting
FPVIOL and the contents are not programmed. Programming, which is not allowed to
cross a flash sector boundary, continues until all requested phrases have been
programmed. The Program Section command also verifies that after programming, all
bits requested to be programmed are programmed.
Flash Operation in Low-Power Modes
K20 Sub-Family Reference Manual, Rev. 6, Nov 2011
636 Freescale Semiconductor, Inc.