Datasheet

6.4.1 Flash electrical specifications
This section describes the electrical characteristics of the flash memory module.
6.4.1.1 Flash timing specifications — program and erase
The following specifications represent the amount of time the internal charge pumps are
active and do not include command overhead.
Table 20. NVM program/erase timing specifications
Symbol Description Min. Typ. Max. Unit Notes
t
hvpgm4
Longword Program high-voltage time — 7.5 18 μs
t
hversscr
Sector Erase high-voltage time — 13 113 ms 1
t
hversblk256k
Erase Block high-voltage time for 256 KB — 416 3616 ms 1
1. Maximum time based on expectations at cycling end-of-life.
6.4.1.2 Flash timing specifications — commands
Table 21. Flash command timing specifications
Symbol Description Min. Typ. Max. Unit Notes
t
rd1blk256k
Read 1s Block execution time
• 256 KB program/data flash — — 1.7 ms
t
rd1sec2k
Read 1s Section execution time (flash sector) — — 60 μs 1
t
pgmchk
Program Check execution time — — 45 μs 1
t
rdrsrc
Read Resource execution time — — 30 μs 1
t
pgm4
Program Longword execution time — 65 145 μs
t
ersblk256k
Erase Flash Block execution time
• 256 KB program/data flash — 435 3700 ms
2
t
ersscr
Erase Flash Sector execution time — 14 114 ms 2
t
pgmsec512
t
pgmsec1k
t
pgmsec2k
Program Section execution time
• 512 bytes flash
• 1 KB flash
• 2 KB flash
—
—
—
2.4
4.7
9.3
—
—
—
ms
ms
ms
t
rd1all
Read 1s All Blocks execution time — — 1.8 ms
t
rdonce
Read Once execution time — — 25 μs 1
t
pgmonce
Program Once execution time — 65 — μs
t
ersall
Erase All Blocks execution time — 870 7400 ms 2
t
vfykey
Verify Backdoor Access Key execution time — — 30 μs 1
Table continues on the next page...
Peripheral operating requirements and behaviors
K60 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc. 33