Datasheet

Table 21. Flash command timing specifications (continued)
Symbol Description Min. Typ. Max. Unit Notes
t
pgmchk
Program Check execution time 45 μs 1
t
rdrsrc
Read Resource execution time 30 μs 1
t
pgm4
Program Longword execution time 65 145 μs
t
ersblk256k
Erase Flash Block execution time
256 KB program/data flash
435
3700
ms
2
t
ersscr
Erase Flash Sector execution time 14 114 ms 2
t
pgmsec512
t
pgmsec1k
t
pgmsec2k
Program Section execution time
512 bytes flash
1 KB flash
2 KB flash
2.4
4.7
9.3
ms
ms
ms
t
rd1all
Read 1s All Blocks execution time 1.8 ms
t
rdonce
Read Once execution time 25 μs 1
t
pgmonce
Program Once execution time 65 μs
t
ersall
Erase All Blocks execution time 870 7400 ms 2
t
vfykey
Verify Backdoor Access Key execution time 30 μs 1
t
swapx01
t
swapx02
t
swapx04
t
swapx08
Swap Control execution time
control code 0x01
control code 0x02
control code 0x04
control code 0x08
200
70
70
150
150
30
μs
μs
μs
μs
t
pgmpart64k
t
pgmpart256k
Program Partition for EEPROM execution time
256 KB FlexNVM
450
ms
t
setramff
t
setram32k
t
setram64k
t
setram256k
Set FlexRAM Function execution time:
Control Code 0xFF
32 KB EEPROM backup
64 KB EEPROM backup
256 KB EEPROM backup
70
0.8
1.3
4.5
1.2
1.9
5.5
μs
ms
ms
ms
Byte-write to FlexRAM for EEPROM operation
t
eewr8bers
Byte-write to erased FlexRAM location execution
time
175 260 μs 3
t
eewr8b32k
t
eewr8b64k
t
eewr8b128k
t
eewr8b256k
Byte-write to FlexRAM execution time:
32 KB EEPROM backup
64 KB EEPROM backup
128 KB EEPROM backup
256 KB EEPROM backup
385
475
650
1000
1800
2000
2400
3200
μs
μs
μs
μs
Word-write to FlexRAM for EEPROM operation
Table continues on the next page...
Peripheral operating requirements and behaviors
K60 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
34 Freescale Semiconductor, Inc.