Datasheet

Table 21. Flash command timing specifications (continued)
Symbol Description Min. Typ. Max. Unit Notes
t
eewr16bers
Word-write to erased FlexRAM location
execution time
— 175 260 μs
t
eewr16b32k
t
eewr16b64k
t
eewr16b128k
t
eewr16b256k
Word-write to FlexRAM execution time:
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
—
—
—
385
475
650
1000
1800
2000
2400
3200
μs
μs
μs
μs
Longword-write to FlexRAM for EEPROM operation
t
eewr32bers
Longword-write to erased FlexRAM location
execution time
— 360 540 μs
t
eewr32b32k
t
eewr32b64k
t
eewr32b128k
t
eewr32b256k
Longword-write to FlexRAM execution time:
• 32 KB EEPROM backup
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
—
—
—
630
810
1200
1900
2050
2250
2675
3500
μs
μs
μs
μs
1. Assumes 25 MHz flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash high voltage current behaviors
Table 22. Flash high voltage current behaviors
Symbol Description Min. Typ. Max. Unit
I
DD_PGM
Average current adder during high voltage
flash programming operation
— 2.5 6.0 mA
I
DD_ERS
Average current adder during high voltage
flash erase operation
— 1.5 4.0 mA
6.4.1.4 Reliability specifications
Table 23. NVM reliability specifications
Symbol Description Min. Typ.
1
Max. Unit Notes
Program Flash
t
nvmretp10k
Data retention after up to 10 K cycles 5 50 — years
t
nvmretp1k
Data retention after up to 1 K cycles 20 100 — years
n
nvmcycp
Cycling endurance 10 K 50 K — cycles 2
Data Flash
t
nvmretd10k
Data retention after up to 10 K cycles 5 50 — years
Table continues on the next page...
Peripheral operating requirements and behaviors
K60 Sub-Family Data Sheet Data Sheet, Rev. 7, 02/2013.
Freescale Semiconductor, Inc. 35