Datasheet

Table 21. Flash command timing specifications (continued)
Symbol Description Min. Typ. Max. Unit Notes
t
rdrsrc
Read Resource execution time — — 40 μs
t
pgm8
Program Phrase execution time — 70 150 μs
t
ersblk128k
t
ersblk256k
Erase Flash Block execution time
• 128 KB data flash
• 256 KB program flash
—
—
110
220
925
1850
ms
ms
2
t
ersscr
Erase Flash Sector execution time — 15 115 ms
t
pgmsec4k
Program Section execution time (4KB flash) — 20 — ms
t
rd1allx
t
rd1alln
Read 1s All Blocks execution time
• FlexNVM devices
• Program flash only devices
—
—
—
—
3.4
3.4
ms
ms
t
rdonce
Read Once execution time — — 30 μs 1
t
pgmonce
Program Once execution time — 70 — μs
t
ersall
Erase All Blocks execution time — 650 5600 ms 2
t
vfykey
Verify Backdoor Access Key execution time — — 30 μs 1
t
swapx01
t
swapx02
t
swapx04
t
swapx08
Swap Control execution time
• control code 0x01
• control code 0x02
• control code 0x04
• control code 0x08
—
—
—
—
200
70
70
—
—
150
150
30
μs
μs
μs
μs
t
pgmpart64k
t
pgmpart256k
Program Partition for EEPROM execution time
• 64 KB FlexNVM
• 256 KB FlexNVM
—
—
235
240
—
—
ms
ms
t
setramff
t
setram64k
t
setram128k
t
setram256k
Set FlexRAM Function execution time:
• Control Code 0xFF
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
—
—
—
205
1.6
2.7
4.8
—
2.5
3.8
6.2
μs
ms
ms
ms
t
eewr8bers
Byte-write to erased FlexRAM location execution
time
— 140 225 μs 3
t
eewr8b64k
t
eewr8b128k
t
eewr8b256k
Byte-write to FlexRAM execution time:
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
—
—
400
450
525
1700
1800
2000
μs
μs
μs
t
eewr16bers
16-bit write to erased FlexRAM location
execution time
— 140 225 μs
t
eewr16b64k
16-bit write to FlexRAM execution time:
— 400 1700 μs
Table continues on the next page...
Peripheral operating requirements and behaviors
K60 Sub-Family, Rev5, 10/2013.
Freescale Semiconductor, Inc. 35