Datasheet

Table 21. Flash command timing specifications (continued)
Symbol Description Min. Typ. Max. Unit Notes
t
eewr16b128k
t
eewr16b256k
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
—
450
525
1800
2000
μs
μs
t
eewr32bers
32-bit write to erased FlexRAM location
execution time
— 180 275 μs
t
eewr32b64k
t
eewr32b128k
t
eewr32b256k
32-bit write to FlexRAM execution time:
• 64 KB EEPROM backup
• 128 KB EEPROM backup
• 256 KB EEPROM backup
—
—
—
475
525
600
1850
2000
2200
μs
μs
μs
1. Assumes 25MHz or greater flash clock frequency.
2. Maximum times for erase parameters based on expectations at cycling end-of-life.
3. For byte-writes to an erased FlexRAM location, the aligned word containing the byte must be erased.
6.4.1.3 Flash high voltage current behaviors
Table 22. Flash high voltage current behaviors
Symbol Description Min. Typ. Max. Unit
I
DD_PGM
Average current
adder during high
voltage flash
programming
operation
— 3.5 7.5 mA
I
DD_ERS
Average current
adder during high
voltage flash erase
operation
— 1.5 4.0 mA
6.4.1.4 Reliability specifications
Table 23. NVM reliability specifications
Symbol Description Min. Typ.
1
Max. Unit Notes
Program Flash
t
nvmretp10k
Data retention after up to 10 K cycles 5 50 — years
t
nvmretp1k
Data retention after up to 1 K cycles 20 100 — years
n
nvmcycp
Cycling endurance 10 K 50 K — cycles
Data Flash
t
nvmretd10k
Data retention after up to 10 K cycles 5 50 — years
t
nvmretd1k
Data retention after up to 1 K cycles 20 100 — years
n
nvmcycd
Cycling endurance 10 K 50 K — cycles 2
FlexRAM as EEPROM
Table continues on the next page...
Peripheral operating requirements and behaviors
K60 Sub-Family, Rev5, 10/2013.
36 Freescale Semiconductor, Inc.