Datasheet
Table 23. NVM reliability specifications (continued)
Symbol Description Min. Typ.
1
Max. Unit Notes
t
nvmretee100
Data retention up to 100% of write endurance 5 50 — years
t
nvmretee10
Data retention up to 10% of write endurance 20 100 — years
n
nvmcycee
Cycling endurance for EEPROM backup 20 K 50 K — cycles 2
n
nvmwree16
n
nvmwree128
n
nvmwree512
n
nvmwree2k
Write endurance
• EEPROM backup to FlexRAM ratio = 16
• EEPROM backup to FlexRAM ratio = 128
• EEPROM backup to FlexRAM ratio = 512
• EEPROM backup to FlexRAM ratio = 2,048
70 K
630 K
2.5 M
10 M
175 K
1.6 M
6.4 M
25 M
—
—
—
—
writes
writes
writes
writes
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a constant
25°C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in Engineering
Bulletin EB619.
2. Cycling endurance represents number of program/erase cycles at -40°C ≤ T
j
≤ 125°C.
6.4.1.5 Write endurance to FlexRAM for EEPROM
When the FlexNVM partition code is not set to full data flash, the EEPROM data set size
can be set to any of several non-zero values.
The bytes not assigned to data flash via the FlexNVM partition code are used by the
FTFE to obtain an effective endurance increase for the EEPROM data. The built-in
EEPROM record management system raises the number of program/erase cycles that can
be attained prior to device wear-out by cycling the EEPROM data through a larger
EEPROM NVM storage space.
While different partitions of the FlexNVM are available, the intention is that a single
choice for the FlexNVM partition code and EEPROM data set size is used throughout the
entire lifetime of a given application. The EEPROM endurance equation and graph
shown below assume that only one configuration is ever used.
Writes_subsystem =
× Write_efficiency × n
EEPROM – 2 × EEESPLIT × EEESIZE
EEESPLIT × EEESIZE
nvmcycee
where
• Writes_subsystem — minimum number of writes to each FlexRAM location for
subsystem (each subsystem can have different endurance)
• EEPROM — allocated FlexNVM for each EEPROM subsystem based on DEPART;
entered with Program Partition command
• EEESPLIT — FlexRAM split factor for subsystem; entered with the Program
Partition command
Peripheral operating requirements and behaviors
K60 Sub-Family, Rev5, 10/2013.
Freescale Semiconductor, Inc. 37