Datasheet

Table 23. NVM reliability specifications (continued)
Symbol Description Min. Typ.
1
Max. Unit Notes
t
nvmretp10k
Data retention after up to 10 K cycles 5 50 — years
t
nvmretp1k
Data retention after up to 1 K cycles 20 100 — years
n
nvmcycp
Cycling endurance 10 K 50 K — cycles 2
1. Typical data retention values are based on measured response accelerated at high temperature and derated to a
constant 25 °C use profile. Engineering Bulletin EB618 does not apply to this technology. Typical endurance defined in
Engineering Bulletin EB619.
2. Cycling endurance represents number of program/erase cycles at -40 °C ≤ T
j
≤ 125 °C.
3.5 Security and integrity modules
There are no specifications necessary for the device's security and integrity modules.
3.6 Analog
3.6.1 ADC electrical specifications
All ADC channels meet the 12-bit single-ended accuracy specifications.
3.6.1.1 12-bit ADC operating conditions
Table 24. 12-bit ADC operating conditions
Symbol Description Conditions Min. Typ.
1
Max. Unit Notes
V
DDA
Supply voltage Absolute 1.71 — 3.6 V
ΔV
DDA
Supply voltage Delta to V
DD
(V
DD
– V
DDA
) -100 0 +100 mV 2
ΔV
SSA
Ground voltage Delta to V
SS
(V
SS
– V
SSA
) -100 0 +100 mV 2
V
REFH
ADC reference
voltage high
1.13 V
DDA
V
DDA
V 3
V
REFL
ADC reference
voltage low
V
SSA
V
SSA
V
SSA
V 3
V
ADIN
Input voltage V
REFL
— V
REFH
V
C
ADIN
Input
capacitance
• 8-bit / 10-bit / 12-bit
modes
— 4 5 pF
R
ADIN
Input series
resistance
— 2 5 kΩ
Table continues on the next page...
Peripheral operating requirements and behaviors
Kinetis KL05 32 KB Flash, Rev4 03/2014. 25
Freescale Semiconductor, Inc.