DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 MMBT3904 NPN switching transistor Product data sheet Supersedes data of 2002 Oct 04 2004 Feb 03
NXP Semiconductors Product data sheet NPN switching transistor MMBT3904 FEATURES QUICK REFERENCE DATA • Collector current capability IC = 200 mA SYMBOL • Collector-emitter voltage VCEO = 40 V. PARAMETER MAX. UNIT VCEO collector-emitter voltage 40 V IC collector current (DC) 200 mA APPLICATIONS • General switching and amplification. PINNING PIN DESCRIPTION DESCRIPTION 1 base NPN switching transistor in a SOT23 plastic package. PNP complement: MMBT3906.
NXP Semiconductors Product data sheet NPN switching transistor MMBT3904 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet NPN switching transistor MMBT3904 CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT ICBO collector cut-off current IE = 0; VCB = 30 V − 50 nA IEBO emitter cut-off current IC = 0; VEB = 6 V − 50 nA hFE DC current gain VCE = 1 V; see Fig.2; note 1 IC = 0.
NXP Semiconductors Product data sheet NPN switching transistor MMBT3904 MGU822 MGU821 500 250 handbook, halfpage handbook, halfpage IC (mA) h FE 400 (1) (2) (3) (4) (5) (6) (7) 200 (1) 300 150 (8) (9) (2) 200 100 (10) (3) 100 50 0 10 −1 1 10 102 I C (mA) 0 103 0 2 4 6 8 10 VCE (V) Tamb = 25 °C. (1) (2) (3) (4) VCE = 1 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (5) IB = 3 mA. (6) IB = 2.5 mA. (7) IB = 2 mA. (8) IB = 1.5 mA. IB = 5 mA. IB = 4.5 mA.
NXP Semiconductors Product data sheet NPN switching transistor MMBT3904 MGU825 103 handbook, halfpage VCEsat (mV) (1) (2) (3) 102 10 10 −1 1 10 102 I C (mA) 103 IC/IB = 10. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.6 Collector-emitter saturation voltage as a function of collector current. VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MLB826 Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns. R1 = 56 Ω; R2 = 2.
NXP Semiconductors Product data sheet NPN switching transistor MMBT3904 PACKAGE OUTLINE Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NXP Semiconductors Product data sheet NPN switching transistor MMBT3904 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
