DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D088 MMBT3906 PNP switching transistor Product data sheet Supersedes data of 2000 Apr 11 2003 Mar 18
NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 FEATURES QUICK REFERENCE DATA • Collector current capability IC = −200 mA SYMBOL • Collector-emitter voltage VCEO = −40 V. VCEO collector-emitter voltage −40 V IC collector current (DC) −200 mA PARAMETER MAX. UNIT APPLICATIONS • General switching and amplification. PINNING PIN DESCRIPTION DESCRIPTION 1 base PNP switching transistor in a SOT23 plastic package. NPN complement: MMBT3904.
NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER CONDITIONS thermal resistance from junction to ambient note 1 VALUE UNIT 500 K/W Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 MHC459 600 MHC460 −250 IC (mA) handbook, halfpage handbook, halfpage hFE (3) (1) (2) −200 (1) (4) 400 (5) −150 (6) (7) (2) −100 (8) −50 (10) 200 (9) (3) 0 −10−1 −1 −10 0 −102 −103 IC (mA) −4 −2 0 −6 −8 −10 VCE (V) Tamb = 25 °C. (1) (2) (3) (4) VCE = −1 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. IB = −1.5 mA. IB = −1.35 mA. IB = −1.2 mA. IB = −1.05 mA. Fig.3 Fig.
NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 MHC463 −103 handbook, halfpage VCEsat (mV) (1) (2) −102 (3) −10 −10−1 −1 −10 −102 IC (mA) −103 IC/IB = 10. (1) Tamb = 25 °C. (2) Tamb = 150 °C. (3) Tamb = −55 °C. Fig.6 Collector-emitter saturation voltage as a function of collector current. VBB handbook, full pagewidth RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω R2 Vi DUT R1 MGD624 Vi = 5 V; T = 500 µs; tp = 10 µs; tr = tf ≤ 3 ns.
NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NXP Semiconductors Product data sheet PNP switching transistor MMBT3906 DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
