Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsSensorsPressure sensor 0 kPa up to 10 kPa SMD

MP3V5010

Rev 0, 4/2009

Freescale Semiconductor

Pressure

Integrated Silicon Pressure Sensor

On-Chip Signal Conditioned,

Temperature Compensated and

Calibrated

The MP3V5010 series piezoresistive transducers are state-of-the-art

monolithic silicon pressure sensors designed for a wide range of applications,

but particularly those employing a microcontroller or microprocessor with A/D

inputs. This transducer combines advanced micromachining techniques,

thin-film metallization, and bipolar processing to provide an accurate, high

level analog output signal that is proportional to the applied pressure.

Features

• 5.0% Maximum Error Over 0° to 85°C

• Ideally Suited for Microprocessor or Microcontroller-Based Systems

• Temperature Compensated Over –40° to +125°C

• Thermoplastic (PPS) Surface Mount Package

• Patented Silicon Shear Stress Strain Gauge

• Available in Differential and Gauge Configurations

ORDERING INFORMATION

Device Name

Package

Options

Case

No.

# of Ports Pressure Type

Device Marking

None Single Dual Gauge Differential Absolute

Small Outline Package (MP3V5010 Series)

MP3V5010GC6U

Rails 482A

• •

MP3V5010G

MP3V5010GC6T1

Tape & Reel

482A

• •

MP3V5010G

MP3V5010GP

Trays

1369

• •

MP3V5010GP

MP3V5010DP

Trays

1351

• •

MP3V5010DP

MP3V5010GVP

Trays 1368

• •

MP3V5010GVP

MP3V5010

Series

0 to 10 kPa (0 to 1.45 psi)

0.1 to 3.1 V Output

SMALL OUTLINE PACKAGE

MP3V5010GC6U/C6T1

CASE 482A-01

MP3V5010GP

CASE 1369-01

MP3V5010DP

CASE 1351-01

MP3V5010GVP

CASE 1368-01

Application Examples

• Hospital Beds

•HVAC

• Respiratory Systems

• Process Control

Summary of content (12 pages)

PAGE 1
Pressure Freescale Semiconductor MP3V5010 Rev 0, 4/2009 Integrated Silicon Pressure Sensor On-Chip Signal Conditioned, Temperature Compensated and Calibrated MP3V5010 Series 0 to 10 kPa (0 to 1.45 psi) 0.1 to 3.1 V Output The MP3V5010 series piezoresistive transducers are state-of-the-art monolithic silicon pressure sensors designed for a wide range of applications, but particularly those employing a microcontroller or microprocessor with A/D inputs.
PAGE 2
Pressure Operating Characteristics Table 1. Operating Characteristics (VS = 3.0 Vdc, TA = 25°C unless otherwise noted, P1 > P2. Decoupling circuit shown in Figure 3 required to meet specification.) Characteristic Symbol Min Typ Max Unit Pressure Range(1) POP 0 — 10 kPa Supply Voltage(2) VS 2.7 3.0 3.3 Vdc Supply Current Io — 7.0 10 mAdc Minimum Pressure Offset(3) @ VS = 3.0 Volts (0 to 85°C) Voff 0.1 0.24 0.38 Vdc Full Scale Output(4) @ VS = 3.0 Volts (0 to 85°C) VFSO 2.
PAGE 3
Pressure Maximum Ratings Table 2. Maximum Ratings(1) Rating Symbol Value Unit Maximum Pressure (P1 > P2) Pmax 75 kPa Storage Temperature Tstg –40 to +125 °C Operating Temperature TA –40 to +125 °C 1. Exposure beyond the specified limits may cause permanent damage or degradation to the device. Figure 1 shows a block diagram of the internal circuitry integrated on a pressure sensor chip.
PAGE 4
Pressure ON-CHIP TEMPERATURE COMPENSATION, CALIBRATION AND SIGNAL CONDITIONING The performance over temperature is achieved by integrating the shear-stress strain gauge, temperature compensation, calibration and signal conditioning circuitry onto a single monolithic chip. Figure 2 illustrates the Differential or Gauge configuration in the basic chip carrier (Case 482).
PAGE 5
Pressure 3 Transfer Function: Vout = VS *(0.09 * P+0.08) ± ERROR VS = 3.0 Vdc TEMP = 0 to 85°C Output (V) 2 TYPICAL MAX MIN 1 0 0 10 Differential Pressure (kPa) Figure 4. Output versus Pressure Differential Transfer Function Nominal Transfer Value: Vout = VS x (0.09 x P + 0.08) ± (Pressure Error x Temp. Factor x 0.09 x VS) VS = 3.0 V ± 0.30 Vdc Temperature Error Band MP3V5010 SERIES 4.0 Temp 3.0 Temperature Error Factor –40 0 to 85 +125 2.0 Multiplier 3 1 3 1.0 0.
PAGE 6
Pressure Pressure Error Band 0.5 0.4 0.3 Pressure Error (kPa) 0.2 0.1 0 –0.1 Pressure (kPa) 0 10 –0.2 –0.3 –0.4 –0.5 Pressure Error (Max) 0 to 10 (kPa) ±0.5 (kPa) PRESSURE (P1)/VACUUM (P2) SIDE IDENTIFICATION TABLE Freescale designates the two sides of the pressure sensor as the Pressure (P1) side and the Vacuum (P2) side. The Pressure (P1) side is the side containing fluoro silicone gel which protects the die from harsh media.
PAGE 7
Pressure PACKAGE DIMENSIONS -A- D 8 PL 4 0.25 (0.010) 5 N M T B S A S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006). 5. ALL VERTICAL SURFACES 5˚ TYPICAL DRAFT. -BG 8 1 S DIM A B C D G H J K M N S V W W V C H J -T- MILLIMETERS MIN MAX 10.54 10.79 10.54 10.79 12.70 13.21 0.96 1.07 2.54 BSC 0.05 0.25 0.23 0.28 1.55 1.80 0˚ 7˚ 11.28 11.38 18.01 18.41 6.
PAGE 8
Pressure PACKAGE DIMENSIONS CASE 1368-01 ISSUE C SMALL OUTLINE PACKAGE MP3V5010 8 Sensors Freescale Semiconductor
PAGE 9
Pressure PACKAGE DIMENSIONS CASE 1368-01 ISSUE C SMALL OUTLINE PACKAGE MP3V5010 Sensors Freescale Semiconductor 9
PAGE 10
Pressure PACKAGE DIMENSIONS CASE 1368-01 ISSUE C SMALL OUTLINE PACKAGE MP3V5010 10 Sensors Freescale Semiconductor
PAGE 11
Pressure PACKAGE DIMENSIONS 2 PLACES 4 TIPS 0.008 (0.20) C A B E A GAGE PLANE e 5 4 e/2 .014 (0.35) θ L D A1 DETAIL G 8 1 b 0.004 (0.1) NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M, 1994. 3. DIMENSIONS "D" AND "E1" DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS. MOLD FLASH OR PROTRUSIONS SHALL NOT EXCEED 0.006 (0.152) PER SIDE. 4. DIMENSION "b" DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.008 (0.203) MAXIMUM.
PAGE 12
How to Reach Us: Home Page: www.freescale.com Web Support: http://www.freescale.com/support USA/Europe or Locations Not Listed: Freescale Semiconductor, Inc. Technical Information Center, EL516 2100 East Elliot Road Tempe, Arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.