Datasheet

Electrical Characteristics
MPC5566 Microcontroller Data Sheet, Rev. 3
Freescale
17
41 V
SSSYN
to V
SS
differential voltage V
SSSYN
– V
SS
–50 50 mV
42 V
RCVSS
to V
SS
differential voltage V
RCVSS
– V
SS
–50 50 mV
43 V
DDF
to V
DD
differential voltage V
DDF
– V
DD
–100 100 mV
43a V
RC33
to V
DDSYN
differential voltage V
RC33
– V
DDSYN
–0.1 0.1
19
V
44 Analog input differential signal range (with common mode 2.5 V) V
IDIFF
–2.5 2.5 V
45 Operating temperature range, ambient (packaged) T
A
= (T
L
to T
H
)T
L
T
H

C
46 Slew rate on power-supply pins — — 50 V/ms
1
V
DDE2
and V
DDE3
are limited to 2.25–3.6 V only if SIU_ECCR[EBTS] = 0; V
DDE2
and V
DDE3
have a range of 1.6–3.6 V if
SIU_ECCR[EBTS] = 1.
2
| V
DDA0
– V
DDA1
| must be < 0.1 V.
3
V
PP
can drop to 3.0 V during read operations.
4
If standby operation is not required, connect V
STBY
to ground.
5
Applies to CLKOUT, external bus pins, and Nexus pins.
6
Maximum average RMS DC current.
7
Eight-way cache enabled (L1CSR0[CORG] = 0b0).
8
Average current measured on automotive benchmark.
9
Peak currents can be higher on specialized code.
10
High use current measured while running optimized SPE assembly code with all code and data 100% locked in cache
(0% miss rate) with all channels of the eMIOS and eTPU running autonomously, plus the eDMA transferring data continuously from
SRAM to SRAM. Higher currents are possible if an ‘idle’ loop that crosses cache lines is run from cache. Write code to avoid this
condition.
11
Four-way cache enabled (L1CSR0[CORG] = 0b1) or (L1CSR0[CORG] = 0b0 with L1CSR0[WAM] = 0b1, L1CSR0[WID] = 0b1111,
L1CSR0[WDD] = 0b1111, L1CSR0[AWID] = 0b1, and L1CSR0[AWDD] = 0b1).
12
The current specification relates to average standby operation after SRAM has been loaded with data. For power up current see
Section 3.7, “Power-Up/Down Sequencing”, Figure 2.
13
Power requirements for the V
DD33
supply depend on the frequency of operation, load of all I/O pins, and the voltages on the I/O
segments. Refer to Tab le 11 for values to calculate the power dissipation for a specific operation.
14
Power requirements for each I/O segment are dependent on the frequency of operation and load of the I/O pins on a particular I/O
segment, and the voltage of the I/O segment. Refer to Table 10 for values to calculate power dissipation for specific operation. The
total power consumption of an I/O segment is the sum of the individual power consumptions for each pin on the segment.
15
Absolute value of current, measured at V
IL
and V
IH
.
16
Weak pullup/down inactive. Measured at V
DDE
= 3.6 V and V
DDEH
= 5.25 V. Applies to pad types: pad_fc, pad_sh, and pad_mh.
17
Maximum leakage occurs at maximum operating temperature. Leakage current decreases by approximately one-half for each 8
o
C
to 12
o
C, in the ambient temperature range of 50
o
C to 125
o
C. Applies to pad types: pad_a and pad_ae.
18
V
SSA
refers to both V
SSA0
and V
SSA1
. | V
SSA0
– V
SSA1
| must be < 0.1 V.
19
Up to 0.6 V during power up and power down.
Table 9. DC Electrical Specifications (T
A
= T
L
to T
H
) (continued)
Spec Characteristic Symbol Min Max. Unit