Datasheet

Electrical Characteristics
MPC5566 Microcontroller Data Sheet, Rev. 3
Freescale
9
3.5 ESD (Electromagnetic Static Discharge) Characteristics
3.6 Voltage Regulator Controller (V
RC
) and
Power-On Reset (POR) Electrical Specifications
The following table lists the V
RC
and POR electrical specifications:
Table 5. ESD Ratings
1,
2
1
All ESD testing conforms to CDF-AEC-Q100 Stress Test Qualification for Automotive Grade Integrated Circuits.
2
Device failure is defined as: ‘If after exposure to ESD pulses, the device does not meet the device specification requirements,
which includes the complete DC parametric and functional testing at room temperature and hot temperature.
Characteristic Symbol Value Unit
ESD for human body model (HBM) 2000 V
HBM circuit description
R1 1500
C100 pF
ESD for field induced charge model (FDCM)
500 (all pins)
V
750 (corner pins)
Number of pulses per pin:
Positive pulses (HBM)
Negative pulses (HBM)
1
1
Interval of pulses 1 second
Table 6. V
RC
and POR Electrical Specifications
Spec Characteristic Symbol Min. Max. Units
11.5 V (V
DD
) POR
1
Negated (ramp up)
Asserted (ramp down)
V
POR15
1.1
1.1
1.35
1.35
V
23.3 V (V
DDSYN
) POR
1
Asserted (ramp up)
Negated (ramp up)
Asserted (ramp down)
Negated (ramp down)
V
POR33
0.0
2.0
2.0
0.0
0.30
2.85
2.85
0.30
V
3
RESET
pin supply
(V
DDEH6
) POR
1, 2
Negated (ramp up)
Asserted (ramp down)
V
POR5
2.0
2.0
2.85
2.85
V
4
V
RC33
voltage
Before V
RC
allows the pass
transistor to start turning on
V
TRANS_START
1.0 2.0 V
5
When V
RC
allows the pass
transistor to completely turn on
3,
4
V
TRANS_ON
2.0 2.85 V
6
When the voltage is greater than
the voltage at which the V
RC
keeps
the 1.5 V supply in regulation
5, 6
V
VRC33REG
3.0 V
Current can be sourced –40
o
C11.0mA
7 by V
RCCTL
at Tj: 25
o
CI
VRCCTL
7
9.0 mA
150
o
C 7.5 mA
8
Voltage differential during power up such that:
V
DD33
can lag V
DDSYN
or V
DDEH6
before V
DDSYN
and V
DDEH6
reach the
V
POR33
and V
POR5
minimums respectively.
V
DD33_LAG
—1.0V