Datasheet

NPIC6C596A_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 18 October 2013 6 of 20
NXP Semiconductors NPIC6C596A-Q100
Power logic 8-bit shift register; open-drain outputs
[1] Each power EDNMOS source is internally connected to GND.
[2] Pulse duration  100 s and duty cycle  2 %.
[3] V
DS
= 15 V; starting junction temperature (T
j
) = 25 C; L = 1.5 H; avalanche current (I
AL
) = 200 mA.
[4] For SO16 packages: above 25 C the value of P
tot
derates linearly with 6.4 mW/C.
For TSSOP16 packages: above 25 C the value of P
tot
derates linearly with 5.8 mW/C.
For DHVQFN16 packages: above 25 C the value of P
tot
derates linearly with 14.6 mW/C.
7.1 Test circuit and waveform
P
tot
total power dissipation T
amb
= 25 C
[4]
SO16 - 800 mW
TSSOP16 - 725 mW
DHVQFN16 - 1825 mW
T
amb
= 125 C
[4]
SO16 - 160 mW
TSSOP16 - 145 mW
DHVQFN16 - 365 mW
Table 3. Limiting values
…continued
In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Max Unit
(1) The word generator has the following characteristics: t
r
,t
f
 10 ns; Z
O
= 50 .
(2) The input pulse duration (t
W
) is increased until peak current I
AL
= 200 mA. Energy test level is defined as:
E
AS
=I
AL
 V
(BR)DSS
 t
AL
/2 = 30 mJ.
Fig 9. Test circuit and waveform for measuring single-pulse avalanche energy
aaa-002556
WORD
GENERATOR
(1)
DUT
7
1
5 V
15 V
5 V
min
0 V
l
AL
= 200 mA
V
(BR)DSS
= 33 V
I
D
V
DS
30 Ω
1.5 mH
16
GND
OE
STCP
DS
SHCP
MR
V
CC
V
DS
l
D
Qn
15
2
10
3-6,
11-14
8
t
w
(2)
t
AL