Datasheet

NPIC6C596A_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 1 — 18 October 2013 7 of 20
NXP Semiconductors NPIC6C596A-Q100
Power logic 8-bit shift register; open-drain outputs
8. Recommended operating conditions
[1] Pulse duration  100 s and duty cycle  2 %.
[2] Technique should limit T
j
 T
amb
to 10 C maximum.
9. Static characteristics
Table 4. Recommended operating conditions
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 2.3 - 5.5 V
V
I
input voltage 0 - 5.5 V
I
D
drain current pulsed drain output current;
V
CC
=5V; T
amb
= 25 C;
all outputs on
[1][2]
--250mA
T
amb
ambient temperature 40 - +125 C
Table 5. Static characteristics
At recommended operating conditions unless otherwise specified. Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions T
amb
= 25 C Unit
Min Typ
[1]
Max
V
IH
HIGH-level input
voltage
V
CC
= 3.0 V to 5.5 V 0.85V
CC
--V
V
IL
LOW-level input
voltage
V
CC
= 3.0 V to 5.5 V - - 0.15V
CC
V
V
OH
HIGH-level
output voltage
serial data output Q7S; V
I
=V
IH
or V
IL
I
O
= 20 A; V
CC
= 3.0 V 2.64 4.49 - V
I
O
= 4mA; V
CC
= 3.0 V 2.4 4.2 - V
V
OL
LOW-level output
voltage
serial data output Q7S; V
I
=V
IH
or V
IL
I
O
=20A; V
CC
= 3.0 V - 0.005 0.12 V
I
O
=4mA; V
CC
= 3.0 V - 0.3 0.6 V
I
I
input leakage
current
V
CC
= 5.5 V; V
I
=V
CC
--1A
V
(BR)DSS
drain-source
breakdown
voltage
I
D
= 1 mA 33 37 - V
V
SD
source-drain
voltage
diode forward voltage; I
F
= 100 mA - 0.85 1.2 V
I
CC
supply current logic supply current; V
CC
= 5.5 V;
V
I
=V
CC
or GND
all outputs off - 0.004 200 A
all outputs on
[2]
- 0.006 500 A
all outputs off; SHCP = 5 MHz;
C
L
=30pF; see Figure 14 and Figure 16
-0.755mA
I
O(nom)
nominal output
current
V
DS
= 0.5 V; T
amb
=85C; I
out
= I
D
[3]
[4][5]
- 140 - mA
I
DSX
drain cut-off
current
V
CC
= 5.5 V; V
DS
= 30 V - 0.002 0.2 A
V
CC
= 5.5 V; V
DS
= 30 V; T
amb
= 125 C - 0.15 0.3 A