SO T6 66 NX1029X 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.
NX1029X NXP Semiconductors 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline 6 5 Graphic symbol D1 4 D2 G1 1 2 G2 3 SOT666 (SOT666) S1 S2 017aaa262 3. Ordering information Table 3.
NX1029X NXP Semiconductors 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
NX1029X NXP Semiconductors 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 001aao121 120 Pder (%) 001aao122 120 Ider (%) 80 80 40 40 0 -75 Fig 1. -25 25 75 125 Tj (°C) 0 -75 175 Normalized total power dissipation as a function of junction temperature Fig 2.
NX1029X NXP Semiconductors 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 001aao140 -1 ID (A) (1) -10-1 (2) (3) (4) -10-2 (5) -10-3 -10-1 -1 -10 -102 VDS (V) IDM is single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 4. Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6.
NX1029X NXP Semiconductors 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 017aaa064 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 5. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa065 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.
NX1029X NXP Semiconductors 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 017aaa064 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 7. TR2: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa065 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.
NX1029X NXP Semiconductors 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel), Static characteristics V(BR)DSS drain-source breakdown voltage ID = -10 µA; VGS = 0 V; Tj = 25 °C -50 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -1.1 -1.6 -2.
NX1029X NXP Semiconductors 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET Table 7. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit VDS = 30 V; ID = 300 mA; VGS = 4.5 V; Tj = 25 °C - 0.5 0.6 nC - 0.2 - nC - 0.
NX1029X NXP Semiconductors 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 017aaa041 6.0 RDSon (Ω) 017aaa042 6.0 RDSon (Ω) (1) 4.0 4.0 (2) (3) 2.0 (1) 2.0 (4) (2) (5) 0.0 0.0 0.2 0.4 0.6 0.8 0.0 0.0 1.0 2.0 4.0 6.0 ID (A) 8.0 10.0 VGS (V) Tj = 25 °C ID = 500 mA; pulsed; tp ≤ 300 μs; δ ≤ 0.01 (1) VGS = 3.25 V (1) Tj = 150 °C (2) VGS = 3.5 V (2) Tj = 25 °C (3) VGS = 4 V (4) VGS = 5 V (5) VGS = 10 V Fig 11.
NX1029X NXP Semiconductors 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 017aaa299 3.0 VGS(th) (V) 017aaa046 102 (1) C (pF) (1) 2.0 (2) (2) 10 (3) (3) 1.0 0.0 –60 0 60 120 Tj (°C) 180 1 10−1 1 VDS (V) ID = 0.25 mA; VDS = VGS f = 1 MHz; VGS = 0 V (1) maximum values (1) Ciss (2) typical values (2) Coss (3) minimum values (3) Crss Fig 15. TR1: Gate-source threshold voltage as a function of junction temperature 102 10 Fig 16.
NX1029X NXP Semiconductors 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 017aaa048 1.2 001aao124 -0.20 VGS = -10 V -4.0 V -3.5 V ID (A) IS (A) -0.15 0.8 (1) -3.0 V (2) -0.10 0.4 -2.5 V -0.05 0.0 0.0 0.4 0.8 1.2 0 VSD (V) 0 -1 -2 -3 VDS (V) -4 Tj = 25 °C VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 19. TR1: Source current as a function of source-drain voltage; typical values Fig 20.
NX1029X NXP Semiconductors 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 001aao127 14 001aao128 -0.20 ID (A) RDSon (Ω) (1) (2) -0.15 10 (1) -0.10 6 (2) -0.05 (2) (1) 2 0 -2 -4 -6 -8 0 -10 VGS (V) 0 -1 -2 ID = -200 mA VDS > ID x RDSon (1) Tj = 150 °C (1) Tj = 25 °C (2) Tj = 25 °C (2) Tj = 150 °C Fig 23. TR2: Drain-source on-state resistance as a function of gate-source voltage; typical values 001aao130 -3 VGS(th) (V) VGS (V) -4 Fig 24.
NX1029X NXP Semiconductors 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 001aao132 -10 001aao133 -0.3 VGS (V) IS (A) -8 -0.2 -6 -4 -0.1 (1) (2) -2 0 0 0.2 0.4 QG (nC) 0 0.6 ID = -180 mA; VDS = -25 V; Tamb = 25 °C 0 -0.4 -0.8 VSD (V) -1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 27. TR2: Gate-source voltage as a function of gate charge; typical values Fig 28. TR2: Source current as a function of source-drain voltage; typical values 8.
NX1029X NXP Semiconductors 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.
NX1029X NXP Semiconductors 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 10. Soldering 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) 0.55 (2×) placement area solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Fig 31. Reflow soldering footprint for SOT666 (SOT666) NX1029X Product data sheet All information provided in this document is subject to legal disclaimers. Rev.
NX1029X NXP Semiconductors 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes NX1029X v.1 20110812 Product data sheet - - NX1029X Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 12 August 2011 © NXP B.V. 2011. All rights reserved.
NX1029X NXP Semiconductors 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
NX1029X NXP Semiconductors 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
NX1029X NXP Semiconductors 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .
