NX2301P 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 26 October 2010 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits 1.8 V RDSon rated for Low Voltage Gate Drive Very fast switching Trench MOSFET technology AEC-Q101 qualified 1.
NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 2. Pinning information Table 2. Pinning Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 G 1 2 S 017aaa094 3. Ordering information Table 3. Ordering information Type number Package Name NX2301P Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4.
NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Ptot Parameter Conditions total power dissipation Tamb = 25 °C Min Max Unit [2] - 400 mW [1] - 710 mW Tsp = 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature - 2.8 W 150 °C −55 +150 °C −65 +150 °C - −0.
NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 017aaa095 −10 Limit RDSon = VDS/ID ID (A) (1) −1 (2) (3) −10−1 (4) (5) −10−2 −10−1 −1 −10 −102 VDS (V) IDM = single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 6 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6.
NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 017aaa096 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 10 0.02 0.01 0 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa097 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.25 0.1 0.33 0.2 0.05 10 0 1 10−3 0.02 0.
NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit - V Static characteristics V(BR)DSS drain-source breakdown ID = −250 μA; VGS = 0 V voltage −20 - VGS(th) gate-source threshold voltage ID = −250 μA; VDS = VGS −0.5 −0.75 −1.
NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET −3.0 017aaa098 VGS = −2.0 V 017aaa099 −10−3 −1.8 V ID (A) ID (A) −10−4 −2.0 (1) −1.6 V (3) (2) −10−5 −1.0 −1.4 V −1.2 V 0.0 0.0 −1.0 −2.0 −3.0 −4.0 −5.0 VDS (V) −10−6 0.0 Tamb = 25 °C −0.5 −1.0 VGS (V) −1.5 Tamb = 25 °C; VDS = −10 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. 017aaa100 1.
NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 017aaa102 −2.0 ID (A) 017aaa103 2.0 a −1.5 1.5 (1) (2) −1.0 1.0 −0.5 0.5 0.0 0.0 −1.0 −2.0 VGS (V) −3.0 0.0 −60 VDS > ID × RDSon 0 60 120 180 Tamb (°C) R DSon a = ----------------------------R DSon ( 25°C ) (1) Tamb = 150 °C (2) Tamb = 25 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa104 −1.5 VGS(th) (V) Fig 11.
NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 017aaa106 −5.0 VGS (V) −4.0 VDS ID −3.0 VGS(pl) −2.0 VGS(th) VGS −1.0 QGS1 0.0 0.0 QGS2 QGS 1.25 2.5 3.75 5.0 QG (nC) QGD QG(tot) 003aaa508 ID = −2 A; VDS = −6 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa107 −1.0 IS (A) −0.75 (1) (2) −0.5 −0.25 0.0 0.0 −0.25 −0.5 −0.75 −1.
NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. NX2301P Product data sheet All information provided in this document is subject to legal disclaimers. Rev.
NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 19. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 20.
NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes NX2301P v.1 20101026 Product data sheet - - NX2301P Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 26 October 2010 © NXP B.V. 2010. All rights reserved.
NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 12.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 13. Contact information For more information, please visit: http://www.nxp.
NX2301P NXP Semiconductors 20 V, 2 A P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . .
