NX3008CBKS 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET Rev. 1 — 29 July 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage ESD protection up to 2 kV Very fast switching AEC-Q101 qualified Trench MOSFET technology 1.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline Graphic symbol 6 5 4 1 2 3 D1 D2 G1 G2 SOT363 (SC-88) S1 S2 017aaa262 3. Ordering information Table 3.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Tj = 25 °C - -30 V TR2 (P-channel) VDS drain-source voltage VGS gate-source voltage ID drain current total power dissipation Ptot 8 V [1] - -200 mA VGS = -4.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 001aao121 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig 1. 001aao122 120 -25 25 75 125 Tj (°C) 0 -75 175 Normalized total power dissipation as a function of junction temperature Fig 2.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 001aao253 -10 lD (A) -1 (1) -10-1 (2) (3) (4) (5) -10-2 -10-1 -1 -10 -102 VDS (V) IDM is a single pulse (1) tp = 1 ms (2) tp = 10 ms (3) DC; Tsp = 25 °C (4) tp = 100 ms (5) DC; Tamb = 25 °C; 1 cm2 drain mounting pad Fig 4. Safe operating area TR2 (P-channel); junction to ambient; continuous and peak drain currents as a function of drain-source 6. Thermal characteristics Table 6.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 017aaa034 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 5. TR1: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa035 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 017aaa034 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 7. TR2, Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa035 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit TR2 (P-channel), Static characteristics V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -30 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.6 -0.9 -1.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET Table 7. Characteristics …continued Symbol Parameter Conditions Min Typ Max Unit Ciss input capacitance - 34 50 pF Coss output capacitance VDS = 15 V; f = 1 MHz; VGS = 0 V; Tj = 25 °C - 6.5 - pF Crss reverse transfer capacitance - 2.2 - pF td(on) turn-on delay time - 15 30 ns tr rise time - 11 - ns td(off) turn-off delay time - 69 138 ns tf fall time - 19 - ns - 0.55 0.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 001aao267 0.4 ID (A) 2.5 V 001aao268 10-3 4.5 V ID (A) 2V 0.3 (2) (1) (3) 10-4 1.75 V 0.2 10-5 1.5 V 0.1 VGS = 1.25 V 0.0 0 1 2 3 VDS (V) 10-6 0.0 4 Tj = 25 °C 0.5 1.0 VGS (V) 1.5 Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 9. TR1: Output characteristics: drain current as a function of drain-source voltage; typical values 001aao269 6 Fig 10.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 001aao272 2.0 a 001aao271 0.4 1.5 ID (A) (1) (2) 0.3 1.0 0.2 0.5 0.1 0.0 -60 0.0 0 1 2 VGS (V) 0 60 120 Tj (˚C) 180 3 VDS > ID x RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 13. TR1: Transfer characteristics: drain current as a function of gate-source voltage; typical values 001aao273 1.5 Fig 14.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 001aao275 5 VDS VGS (V) ID 4 VGS(pl) 3 VGS(th) VGS 2 QGS1 QGS2 QGS 1 QGD QG(tot) 003aaa508 0 0.0 0.2 0.4 QG (nC) 0.6 ID = 350 mA; VDS = 15 V; Tamb = 25 °C Fig 17. TR1: Gate-source voltage as a function of gate charge; typical values 001aao276 0.4 Fig 18. Gate charge waveform definitions 001aao256 -0.25 -4.5 V ID (A) IS (A) -3 V -0.20 -2.5 V 0.3 (1) -0.15 (2) 0.2 -0.10 -2 V 0.1 -0.05 VGS = -1.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 001aao257 -10-3 001aao258 14 RDS (on) (Ω) 12 ID (A) (1) (1) (2) (3) (2) (3) (4) 10 -10-4 8 6 (5) -10-5 4 (6) 2 -10-6 0.0 -0.5 -1.0 VGS (V) 0 -1.5 0 -0.05 -0.10 Tj = 25 °C; VDS = -5 V Tj = 25 °C (1) minimum values (1) VGS = -1.75 V (2) typical values (2) VGS = -2.0 V (3) maximum values (3) VGS = -2.25 V -0.15 -0.20 -0.25 ID (A) (4) VGS = -2.5 V (5) VGS = -3.0 V (6) VGS = -4.5 V Fig 21.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 001aao261 2.0 001aao262 -1.5 a VGS(th) (V) (1) 1.5 -1.0 (2) 1.0 (3) -0.5 0.5 0.0 -60 0 60 120 Tj (˚C) 180 0.0 -60 0 60 120 Tj (˚C) 180 ID = -0.25 mA; VDS = VGS (1) maximum values (2) typical values (3) minimum values Fig 25. TR2: Normalized drain-source on-state resistance as a function of junction temperature; typical values Fig 26.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 001aao265 -0.25 VDS IS (A) ID -0.20 VGS(pl) -0.15 (1) VGS(th) VGS (2) -0.10 QGS1 QGS2 QGS QGD QG(tot) -0.05 003aaa508 0.00 0.0 -0.4 -0.8 VSD (V) -1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 29. Gate charge waveform definitions Fig 30. TR2: Source current as a function of source-drain voltage; typical values 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 31.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 6 leads SOT363 D E B y X A HE 6 5 v M A 4 Q pin 1 index A A1 1 2 e1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 10. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 33. Reflow soldering footprint for SOT363 (SC-88) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 sot363_fw Fig 34.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes NX3008CBKS v.1 20110729 Product data sheet - - NX3008CBKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 © NXP B.V. 2011. All rights reserved.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
NX3008CBKS NXP Semiconductors 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .
