Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsNX3008NBK,215, MOSFET

1. Product profile

1.1 General description

N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23

(TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

1.2 Features and benefits

 Very fast switching

 Low threshold voltage

 Trench MOSFET technology

 ESD protection up to 2 kV

 AEC-Q101 qualified

1.3 Applications

 Relay driver

 High-speed line driver

 Low-side loadswitch

 Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm

NX3008NBK

30 V, 400 mA N-channel Trench MOSFET

Rev. 1 — 2 August 2011 Product data sheet

SOT23

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

drain-source voltage T

=25°C - - 30 V

gate-source voltage -8 - 8 V

drain current V

=4.5V;

amb

=25°C

[1]

- - 400 mA

Static characteristics

DSon

drain-source on-state

resistance

=4.5V;

= 350 mA; T

=25°C

-11.4Ω

Summary of content (16 pages)

PAGE 1
SO T2 3 NX3008NBK 30 V, 400 mA N-channel Trench MOSFET Rev. 1 — 2 August 2011 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  ESD protection up to 2 kV  Low threshold voltage  AEC-Q101 qualified  Trench MOSFET technology 1.
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NX3008NBK NXP Semiconductors 30 V, 400 mA N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 1 2 G SOT23 (TO-236AB) S 017aaa255 3. Ordering information Table 3. Ordering information Type number NX3008NBK Package Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4.
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NX3008NBK NXP Semiconductors 30 V, 400 mA N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - 30 V VGS gate-source voltage drain current ID total power dissipation Ptot 8 V VGS = 4.5 V; Tamb = 25 °C - 400 mA VGS = 4.
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NX3008NBK NXP Semiconductors 30 V, 400 mA N-channel Trench MOSFET 001aao121 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig 1. 001aao122 120 -25 25 75 125 Tj (°C) 0 -75 175 Normalized total power dissipation as a function of junction temperature Fig 2.
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NX3008NBK NXP Semiconductors 30 V, 400 mA N-channel Trench MOSFET 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - 310 370 K/W [2] - 260 300 K/W - - 115 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
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NX3008NBK NXP Semiconductors 30 V, 400 mA N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.6 0.9 1.
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NX3008NBK NXP Semiconductors 30 V, 400 mA N-channel Trench MOSFET 001aao267 0.4 4.5 V ID (A) 2.5 V 001aao268 10-3 ID (A) 2V 0.3 (2) (1) (3) 10-4 1.75 V 0.2 10-5 1.5 V 0.1 VGS = 1.25 V 0.0 0 1 2 3 VDS (V) 4 10-6 0.0 Tj = 25 °C 0.5 1.0 VGS (V) 1.5 Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7.
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NX3008NBK NXP Semiconductors 30 V, 400 mA N-channel Trench MOSFET 001aao272 2.0 001aao271 0.4 a 1.5 ID (A) (1) (2) 0.3 1.0 0.2 0.5 0.1 0.0 -60 0.0 0 1 2 VGS (V) 0 60 120 Tj (˚C) 180 3 VDS > ID x RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 001aao273 1.5 VGS(th) (V) Fig 11.
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NX3008NBK NXP Semiconductors 30 V, 400 mA N-channel Trench MOSFET 001aao275 5 VGS (V) VDS 4 ID 3 VGS(pl) VGS(th) 2 VGS QGS1 1 QGS2 QGS 0 0.0 0.2 0.4 QG (nC) QGD QG(tot) 003aaa508 0.6 ID = 0.4 A; VDS = 15 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 001aao276 0.4 IS (A) 0.3 (1) (2) 0.2 0.1 0.0 0.0 0.4 0.6 VSD (V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16.
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NX3008NBK NXP Semiconductors 30 V, 400 mA N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. NX3008NBK Product data sheet All information provided in this document is subject to legal disclaimers.
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NX3008NBK NXP Semiconductors 30 V, 400 mA N-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
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NX3008NBK NXP Semiconductors 30 V, 400 mA N-channel Trench MOSFET 10. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 19. Reflow soldering footprint for SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 20.
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NX3008NBK NXP Semiconductors 30 V, 400 mA N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes NX3008NBK v.1 20110802 Product data sheet - - NX3008NBK Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 2 August 2011 © NXP B.V. 2011. All rights reserved.
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NX3008NBK NXP Semiconductors 30 V, 400 mA N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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NX3008NBK NXP Semiconductors 30 V, 400 mA N-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
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NX3008NBK NXP Semiconductors 30 V, 400 mA N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . .