Datasheet

NX3008NBK All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 1 — 2 August 2011 4 of 16
NXP Semiconductors
NX3008NBK
30 V, 400 mA N-channel Trench MOSFET
Fig 1. Normalized total power dissipation as a
function of junction temperature
Fig 2. Normalized continuous drain current as a
function of junction temperature
I
DM
is a single pulse
(1) t
p
= 1 ms
(2) t
p
= 10 ms
(3) t
p
= 100 ms
(4) DC; T
sp
= 25 °C
(5) DC; T
amb
= 25 °C; 1 cm
2
drain mounting pad
Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source
voltage
T
j
(°C)
-75 17512525 75-25
001aao121
40
80
120
P
der
(%)
0
T
j
(°C)
-75 17512525 75-25
001aao122
40
80
120
I
der
(%)
0
001aao266
V
DS
(V)
10
-1
10
2
101
1
10
-1
10
l
D
(A)
10
-2
(1)
(2)
(3)
(4)
(5)