Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsFETsNX3008PBKV,115, MOSFET

1. Product profile

1.1 General description

Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat

lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET

technology.

1.2 Features and benefits

 Very fast switching

 Low threshold voltage

 Trench MOSFET technology

 ESD protection up to 2 kV

 AEC-Q101 qualified

1.3 Applications

 Relay driver

 High-speed line driver

 High-side loadswitch

 Switching circuits

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

drain 1 cm

NX3008PBKV

30 V, 220 mA dual P-channel Trench MOSFET

Rev. 1 — 29 July 2011 Product data sheet

SOT666

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

Per transistor

drain-source voltage T

=25°C - - -30 V

gate-source voltage -8 - 8 V

drain current V

=-4.5V; T

amb

=25°C

[1]

- - -220 mA

Static characteristics (per transistor)

DSon

drain-source on-state

resistance

=-4.5V; I

=-200mA;

=25°C

-2.84.1Ω

Summary of content (17 pages)

PAGE 1
SO T6 66 NX3008PBKV 30 V, 220 mA dual P-channel Trench MOSFET Rev. 1 — 29 July 2011 Product data sheet 1. Product profile 1.1 General description Dual P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Very fast switching  ESD protection up to 2 kV  Low threshold voltage  AEC-Q101 qualified  Trench MOSFET technology 1.
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NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline 6 5 Graphic symbol D1 4 D2 G1 1 2 G2 3 SOT666 (SOT666) S1 S2 017aaa260 3. Ordering information Table 3.
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NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDS drain-source voltage Tj = 25 °C - -30 V VGS gate-source voltage ID drain current Per transistor total power dissipation Ptot 8 V [1] - -220 mA VGS = -4.
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NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 001aao121 120 Pder (%) Ider (%) 80 80 40 40 0 -75 Fig 1. 001aao122 120 -25 25 75 125 Tj (°C) 0 -75 175 Normalized total power dissipation as a function of junction temperature Fig 2.
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NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 6. Thermal characteristics Table 6.
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NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 017aaa065 103 Zth(j-a) (K/W) duty cycle = 1 0.75 0.5 102 0.25 0.33 0.2 0.1 0.05 0 0.02 0.01 10 1 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 1 cm2 Fig 5. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values NX3008PBKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev.
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NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor) V(BR)DSS drain-source breakdown voltage ID = -250 µA; VGS = 0 V; Tj = 25 °C -30 - - V VGSth gate-source threshold voltage ID = -250 µA; VDS = VGS; Tj = 25 °C -0.6 -0.9 -1.
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NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 001aao256 -0.25 -4.5 V ID (A) 001aao257 -10-3 -3 V -0.20 ID (A) -2.5 V (1) (2) (3) -10-4 -0.15 -0.10 -2 V -10-5 -0.05 VGS = -1.5 V 0.00 0 -1 -2 -3 VDS (V) -4 -10-6 0.0 Tj = 25 °C -0.5 -1.0 VGS (V) -1.5 Tj = 25 °C; VDS = -5 V (1) minimum values (2) typical values (3) maximum values Fig 6.
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NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 001aao260 -0.25 001aao261 2.0 ID (A) a -0.20 1.5 (1) (2) -0.15 1.0 -0.10 0.5 -0.05 0.00 0 -1 -2 VGS (V) -3 0.0 -60 0 60 120 Tj (˚C) 180 VDS > ID x RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 001aao262 -1.5 Fig 11.
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NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 001aao264 -5 VGS (V) VDS -4 ID -3 VGS(pl) -2 VGS(th) VGS -1 QGS1 QGS2 QGS 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 QG (nC) QGD QG(tot) 003aaa508 ID = -200 mA; VDS = -15 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 001aao265 -0.25 IS (A) -0.20 -0.15 (1) (2) -0.10 -0.05 0.00 0.0 -0.4 -0.8 VSD (V) -1.
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NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications.
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NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 9. Package outline Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.
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NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 10. Soldering 2.75 2.45 2.1 1.6 solder lands 0.4 (6×) 0.25 (2×) 0.538 2 1.7 1.075 0.3 (2×) 0.55 (2×) placement area solder paste occupied area 0.325 0.375 (4×) (4×) Dimensions in mm 1.7 0.45 (4×) 0.6 (2×) 0.5 (4×) 0.65 (2×) sot666_fr Fig 19. Reflow soldering footprint for SOT666 (SOT666) NX3008PBKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev.
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NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes NX3008PBKV v.1 20110729 Product data sheet - - NX3008PBKV Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 29 July 2011 © NXP B.V. 2011. All rights reserved.
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NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
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NX3008PBKV NXP Semiconductors 30 V, 220 mA dual P-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .