NX3020NAKS 30 V, 180 mA dual N-channel Trench MOSFET 11 November 2013 Product data sheet 1. General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4.
NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline 6 5 Graphic symbol D2 D1 4 G1 1 2 G2 3 TSSOP6 (SOT363) S1 S2 017aaa256 6. Ordering information Table 3.
NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET Symbol Parameter Conditions Min Max Unit Tsp = 25 °C - 1100 mW source current Tamb = 25 °C - 180 mA Ptot total power dissipation Tamb = 25 °C - 375 mW Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C Source-drain diode IS Per device [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for
NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 017aaa673 1 Limit RDSon = VDS/ID ID (A) tp = 100 µs tp = 1 ms 10-1 tp = 10 ms tp = 100 ms DC; Tsp = 25 °C 10-2 DC; Tamb = 25 °C; drain mounting pad 1 cm2 10-3 10-1 1 10 102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6.
NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 017aaa674 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.25 0.1 0.05 0.02 0 0.01 10 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa675 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.2 0.25 0.1 0.05 0 10 10-3 0.02 0.
NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor) V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 30 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 0.8 1.2 1.
NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 017aaa663 0.5 10 V 4.5 V ID (A) 0.4 017aaa664 10-3 3.5 V ID (A) 3V 10-4 0.3 min typ max 2.5 V 0.2 10-5 0.1 0 Fig. 6. VGS = 2 V 0 1 2 3 10-6 4 VDS (V) 0 0.5 1.0 1.5 VGS (V) 2.0 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 7.
NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 017aaa667 0.4 017aaa668 2.5 a ID (A) 2.0 0.3 1.5 0.2 1.0 0.1 Tj = 150 °C 0 0 0.5 Tj = 25 °C 1 2 3 VGS (V) 0 -60 4 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa669 2.0 0 60 120 017aaa670 C (pF) 1.5 180 Fig. 11.
NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 017aaa671 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0 0.2 0.4 0.6 QG (nC) Fig. 15. Gate charge waveform definitions 0.8 ID = 0.15 A; VDS = 15 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 017aaa672 0.5 IS (A) 0.4 0.3 0.2 0.1 0 Tj = 150 °C 0 0.4 Tj = 25 °C 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16.
NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 6 leads SOT363 D B E y A X HE 6 5 v M A 4 Q pin 1 index A 1 2 e1 A1 3 bp c Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w y mm 1.1 0.8 0.1 0.30 0.20 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.25 0.15 0.2 0.2 0.
NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 13. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig. 19. Reflow soldering footprint for TSSOP6 (SOT363) 1.5 solder lands 0.3 2.5 4.5 1.5 solder resist occupied area Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 sot363_fw Fig. 20.
NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes NX3020NAKS v.3 20131111 Product data sheet - NX3020NAKS v.2 Modifications: • NX3020NAKS v.2 20131029 Product data sheet - NX3020NAKS v.1 NX3020NAKS v.
NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.
NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations.
NX3020NAKS NXP Semiconductors 30 V, 180 mA dual N-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ............................
