SO T3 23 NX3020NAKW 30 V, 180 mA N-channel Trench MOSFET 29 October 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Very fast switching Trench MOSFET technology ESD protection Low threshold voltage 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4.
NX3020NAKW NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 1 2 G SC-70 (SOT323) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package NX3020NAKW Name Description Version SC-70 plastic surface-mounted package; 3 leads SOT323 7. Marking Table 4.
NX3020NAKW NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET Symbol Parameter Conditions Min Max Unit Tsp = 25 °C - 1100 mW Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 180 mA Source-drain diode IS source current [1] [2] Tamb = 25 °C [1] 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
NX3020NAKW NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET 017aaa682 1 tp = 100 µs Limit RDSon = VDS/ID ID (A) tp = 1 ms 10-1 tp = 10 ms tp = 100 ms DC; Tsp = 25 °C 10-2 DC; Tamb = 25 °C; drain mounting pad 1 cm2 10-3 10-1 1 10 102 VDS (V) IDM = single pulse Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 9. Thermal characteristics Table 6.
NX3020NAKW NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET 017aaa683 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 0.33 102 0.25 0.2 0.1 0.05 0.02 0.01 0 10 10-3 10-2 10-1 1 102 10 103 tp (s) FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 017aaa684 103 duty cycle = 1 Zth(j-a) (K/W) 0.75 0.5 102 0.33 0.25 0.2 0.1 0.05 0.02 0.
NX3020NAKW NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 3.5 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 3.5 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - - 1 µA VGS = 4.5 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA VGS = -4.5 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA VGS = 10 V; ID = 100 mA; Tj = 25 °C - 2.7 4.
NX3020NAKW NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET 017aaa663 0.5 10 V 4.5 V ID (A) 0.4 017aaa664 10-3 3.5 V ID (A) 3V 10-4 0.3 min typ max 2.5 V 0.2 10-5 0.1 0 Fig. 6. VGS = 2 V 0 1 2 3 10-6 4 VDS (V) 0 0.5 1.0 1.5 VGS (V) 2.0 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a Fig. 7. function of drain-source voltage; typical values Sub-threshold drain current as a function of gate-source voltage 017aaa665 10 2V RDSon (Ω) 2.
NX3020NAKW NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET 017aaa667 0.4 017aaa668 2.5 a ID (A) 2.0 0.3 1.5 0.2 1.0 0.1 Tj = 150 °C 0 0 0.5 Tj = 25 °C 1 2 3 VGS (V) 0 -60 4 VDS > ID × RDSon Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa669 2.0 0 60 120 017aaa670 C (pF) 1.5 180 Fig. 11.
NX3020NAKW NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET 017aaa671 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0 0.2 0.4 0.6 QG (nC) Fig. 15. Gate charge waveform definitions 0.8 ID = 0.15 A; VDS = 15 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 017aaa672 0.5 IS (A) 0.4 0.3 0.2 0.1 0 Tj = 150 °C 0 0.4 Tj = 25 °C 0.8 VSD (V) 1.2 VGS = 0 V Fig. 16.
NX3020NAKW NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET 12. Package outline Plastic surface-mounted package; 3 leads SOT323 D B E A X HE y v M A 3 Q A A1 1 c 2 e1 bp Lp w M B e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max bp c D E e e1 HE Lp Q v w mm 1.1 0.8 0.1 0.4 0.3 0.25 0.10 2.2 1.8 1.35 1.15 1.3 0.65 2.2 2.0 0.45 0.15 0.23 0.13 0.2 0.
NX3020NAKW NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET 13. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 solder paste 1.3 occupied area 0.5 (3×) 1 Dimensions in mm 0.55 (3×) sot323_fr Fig. 19. Reflow soldering footprint for SC-70 (SOT323) 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 09 (2×) Dimensions in mm preferred transport direction during soldering sot323_fw Fig. 20.
NX3020NAKW NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET 14. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes NX3020NAKW v.2 20131029 Product data sheet - NX3020NAKW v.1 Modifications: • • • NX3020NAKW v.
NX3020NAKW NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 15. Legal information 15.
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NX3020NAKW NXP Semiconductors 30 V, 180 mA N-channel Trench MOSFET 16. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information .................................
