Datasheet

NXP Semiconductors
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
NX3020NAKW All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 29 October 2013 2 / 15
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 G gate
2 S source
3 D drain
1 2
3
SC-70 (SOT323)
017aaa255
G
D
S
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
NX3020NAKW SC-70 plastic surface-mounted package; 3 leads SOT323
7. Marking
Table 4. Marking codes
Type number Marking code
[1]
NX3020NAKW %3A
[1] % = placeholder for manufacturing site code
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage - 30 V
V
GS
gate-source voltage
T
j
= 25 °C
-20 20 V
V
GS
= 10 V; T
amb
= 25 °C [1] - 180 mAI
D
drain current
V
GS
= 10 V; T
amb
= 100 °C [1] - 110 mA
I
DM
peak drain current T
amb
= 25 °C; single pulse; t
p
≤ 10 µs - 720 mA
[2] - 260 mWP
tot
total power dissipation T
amb
= 25 °C
[1] - 300 mW