Datasheet

NXP Semiconductors
NX3020NAKW
30 V, 180 mA N-channel Trench MOSFET
NX3020NAKW All information provided in this document is subject to legal disclaimers. © NXP N.V. 2013. All rights reserved
Product data sheet 29 October 2013 4 / 15
017aaa682
V
DS
(V)
10
-1
10
2
101
10
-1
10
-2
1
I
D
(A)
10
-3
t
p
= 100 µs
t
p
= 1 ms
t
p
= 10 ms
t
p
= 100 ms
Limit R
DSon
= V
DS
/I
D
DC; T
sp
= 25 °C
DC; T
amb
= 25 °C;
drain mounting pad 1 cm
2
I
DM
= single pulse
Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-
source voltage
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - 415 480 K/WR
th(j-a)
thermal resistance
from junction to
ambient
in free air
[2] - 350 400 K/W
R
th(j-sp)
thermal resistance
from junction to solder
point
- - 110 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2]
Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm
2
.