SO T2 3 NX7002AKA 60 V, single N-channel Trench MOSFET 18 February 2013 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • • • • Very fast switching Trench MOSFET technology ESD protected AEC-Q101 qualified 3. Applications • • • • Relay driver High-speed line driver Low-side loadswitch Switching circuits 4.
NX7002AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 1 2 G TO-236AB (SOT23) S 017aaa255 6. Ordering information Table 3. Ordering information Type number Package NX7002AKA Name Description Version TO-236AB plastic surface-mounted package; 3 leads SOT23 7. Limiting values Table 4.
NX7002AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET [1] [2] 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm . Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 017aaa123 120 Pder (%) Ider (%) 80 80 40 40 0 - 75 Fig. 1. 017aaa124 120 - 25 25 75 125 Tj (°C) 0 - 75 175 Normalized total power dissipation as a function of junction temperature Fig. 2.
NX7002AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) Min Typ Max Unit [1] - 410 470 K/W [2] - 330 380 K/W - - 95 K/W thermal resistance from junction to solder point [1] [2] 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
NX7002AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET 9. Characteristics Table 6. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1.1 1.6 2.
NX7002AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa469 0.20 10 V ID (A) VGS = 3 V 3.5 V 017aaa470 10-3 5V ID (A) 0.15 10-4 (1) (2) (3) 0.10 2.5 V 10-5 0.05 2V 0 Fig. 6. 0 1 2 3 VDS (V) 10-6 4 0 1 2 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a function of drain-source voltage; typical values (1) minimum values (2) typical values (3) maximum values Fig. 7.
NX7002AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa473 0.20 (1) ID (A) a 0.15 1.5 0.10 1.0 0.05 0.5 (2) 0 0 1 017aaa474 2.0 (2) (1) 2 3 4 VGS (V) 0 -60 5 VDS > ID × RDSon 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values (1) Tj = 25 °C (2) Tj = 150 °C Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa475 2.
NX7002AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa477 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0 0.2 0.4 0.6 QG (nC) Fig. 15. Gate charge waveform definitions 0.8 ID = 0.2 A; VDS = 30 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 017aaa478 0.20 IS (A) 0.15 (1) 0.10 (2) 0.05 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig. 16.
NX7002AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET 10. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition 10.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 11. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.
NX7002AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET 12. Soldering 3.3 2.9 1.9 solder lands 3 solder resist 2 1.7 solder paste occupied area 0.6 (3×) 0.7 (3×) Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig. 19. Reflow soldering footprint for TO-236AB (SOT23) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig. 20.
NX7002AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET 13. Revision history Table 7. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes NX7002AKA v.1 20130218 Product data sheet - - NX7002AKA Product data sheet All information provided in this document is subject to legal disclaimers. 18 February 2013 © NXP B.V. 2013.
NX7002AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 14. Legal information 14.
NX7002AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET No offer to sell or license — Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. Export control — This document as well as the item(s) described herein may be subject to export control regulations.
NX7002AKA NXP Semiconductors 60 V, single N-channel Trench MOSFET 15. Contents 1 General description ............................................... 1 2 Features and benefits ............................................1 3 Applications ........................................................... 1 4 Quick reference data ............................................. 1 5 Pinning information ............................................... 2 6 Ordering information ..................................
