NX7002AKS 60 V, dual N-channel Trench MOSFET Rev. 1 — 1 March 2012 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Very fast switching ESD protection Trench MOSFET technology 1.3 Applications Relay driver Low-side load switch High-speed line driver Switching circuits 1.
NX7002AKS NXP Semiconductors 60 V, dual N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 S1 source TR1 2 G1 gate TR1 3 D2 drain TR2 4 S2 source TR2 5 G2 gate TR2 6 D1 drain TR1 Simplified outline Graphic symbol 6 5 4 1 2 3 D1 D2 G1 G2 SOT363 (TSSOP6) S1 S2 017aaa256 3. Ordering information Table 3.
NX7002AKS NXP Semiconductors 60 V, dual N-channel Trench MOSFET 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
NX7002AKS NXP Semiconductors 60 V, dual N-channel Trench MOSFET 017aaa479 1 Limit RDSon = VDS/ID ID (A) (1) 10-1 (2) (3) (4) 10-2 (5) (6) 10-3 10-1 1 10 102 VDS (V) IDM = single pulse (1) tp = 100 µs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms (6) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6.
NX7002AKS NXP Semiconductors 60 V, dual N-channel Trench MOSFET 017aaa480 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.33 0.2 0.5 0.25 0.1 0.05 0.02 10 0.01 0 1 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 tp (s) 103 FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 017aaa481 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.33 0.2 0.5 0.25 0.1 0.05 0.02 10 0.
NX7002AKS NXP Semiconductors 60 V, dual N-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics V(BR)DSS drain-source breakdown voltage ID = 250 µA; VGS = 0 V; Tj = 25 °C 60 - - V VGSth gate-source threshold voltage ID = 250 µA; VDS = VGS; Tj = 25 °C 1.1 1.6 2.
NX7002AKS NXP Semiconductors 60 V, dual N-channel Trench MOSFET 017aaa469 0.20 ID (A) VGS = 3 V 3.5 V 017aaa470 10-3 5V 10 V ID (A) 0.15 10-4 (1) (2) (3) 0.10 2.5 V 10-5 0.05 2V 0 0 1 2 3 VDS (V) 4 10-6 Tj = 25 °C 0 1 2 VGS (V) 3 Tj = 25 °C; VDS = 5 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a function of drain-source voltage; typical values Fig 7. 017aaa471 10 RDSon (Ω) 017aaa472 12 3.0 V 2.
NX7002AKS NXP Semiconductors 60 V, dual N-channel Trench MOSFET 017aaa473 0.20 ID (A) a 0.15 1.5 0.10 1.0 0.05 0.5 (1) (2) 0 0 1 017aaa474 2.0 (2) (1) 2 3 4 VGS (V) 0 -60 5 0 60 120 Tj (°C) 180 VDS > ID × RDSon (1) Tj = 25 °C (2) Tj = 150 °C Fig 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa475 2.5 VGS(th) (V) 017aaa476 102 C (pF) (1) 2.0 Fig 11.
NX7002AKS NXP Semiconductors 60 V, dual N-channel Trench MOSFET 017aaa477 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0 0.2 0.4 0.6 QG (nC) 0.8 ID = 0.2 A; VDS = 30 V; Tamb = 25 °C Fig 14. Gate-source voltage as a function of gate charge; typical values Fig 15. Gate charge waveform definitions 017aaa478 0.20 IS (A) 0.15 (2) (1) 0.10 0.05 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig 16.
NX7002AKS NXP Semiconductors 60 V, dual N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig 17. Duty cycle definition 9. Package outline 2.2 1.8 6 2.2 1.35 2.0 1.15 1.1 0.8 5 4 2 3 0.45 0.15 pin 1 index 1 0.3 0.2 0.65 0.25 0.10 1.3 Dimensions in mm 06-03-16 Fig 18. Package outline SOT363 (TSSOP6) NX7002AKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 March 2012 © NXP B.V. 2012.
NX7002AKS NXP Semiconductors 60 V, dual N-channel Trench MOSFET 10. Soldering 2.65 solder lands 2.35 1.5 0.4 (2×) 0.6 0.5 (4×) (4×) solder resist solder paste 0.5 (4×) 0.6 (2×) occupied area 0.6 (4×) Dimensions in mm 1.8 sot363_fr Fig 19. Reflow soldering footprint for SOT363 (TSSOP6) 1.5 solder lands 0.3 2.5 4.5 solder resist occupied area 1.5 Dimensions in mm 1.3 preferred transport direction during soldering 1.3 2.45 5.3 sot363_fw Fig 20.
NX7002AKS NXP Semiconductors 60 V, dual N-channel Trench MOSFET 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes NX7002AKS v.1 20120301 Product data sheet - - NX7002AKS Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 1 March 2012 © NXP B.V. 2012. All rights reserved.
NX7002AKS NXP Semiconductors 60 V, dual N-channel Trench MOSFET 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
NX7002AKS NXP Semiconductors 60 V, dual N-channel Trench MOSFET Terms and conditions of commercial sale— NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.com/profile/terms, unless otherwise agreed in a valid written individual agreement. In case an individual agreement is concluded only the terms and conditions of the respective agreement shall apply.
NX7002AKS NXP Semiconductors 60 V, dual N-channel Trench MOSFET 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information . . . . .
