Datasheet

NX7002AKS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 1 March 2012 6 of 15
NXP Semiconductors
NX7002AKS
60 V, dual N-channel Trench MOSFET
7. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
(BR)DSS
drain-source
breakdown voltage
I
D
=250µA; V
GS
=0V; T
j
=25°C 60--V
V
GSth
gate-source threshold
voltage
I
D
=250µA; V
DS
=V
GS
; T
j
= 25 °C 1.1 1.6 2.1 V
I
DSS
drain leakage current V
DS
=60V; V
GS
=0V; T
j
=25°C --1µA
V
DS
=60V; V
GS
=0V; T
j
=150°C --10µA
I
GSS
gate leakage current V
GS
=20V; V
DS
=0V; T
j
=25°C --2µA
V
GS
=-20V; V
DS
=0V; T
j
=25°C --2µA
V
GS
=10V; V
DS
=0V; T
j
=25°C --0.5µA
V
GS
=-10V; V
DS
=0V; T
j
=25°C --0.5µA
V
GS
=5V; V
DS
=0V; T
j
= 25 °C - - 100 nA
V
GS
=-5V; V
DS
=0V; T
j
= 25 °C - - 100 nA
R
DSon
drain-source on-state
resistance
V
GS
=10V; I
D
=100mA; T
j
=25°C - 3 4.5 Ω
V
GS
=10V; I
D
=100mA; T
j
= 150 °C - 6.2 9.2 Ω
V
GS
=5V; I
D
= 100 mA; T
j
=25°C - 3.7 5.2 Ω
g
fs
forward
transconductance
V
DS
=10V; I
D
= 200 mA; T
j
= 25 °C - 230 - mS
Dynamic characteristics
Q
G(tot)
total gate charge V
DS
=30V; I
D
= 200 mA; V
GS
=4.5V;
T
j
=25°C
- 0.33 0.43 nC
Q
GS
gate-source charge - 0.12 - nC
Q
GD
gate-drain charge - 0.09 - nC
C
iss
input capacitance V
DS
=10V; f=1MHz; V
GS
=0V;
T
j
=25°C
-1117pF
C
oss
output capacitance - 3.4 - pF
C
rss
reverse transfer
capacitance
-1.4-pF
t
d(on)
turn-on delay time V
DS
=40V; R
L
= 250 Ω; V
GS
=10V;
R
G(ext)
=6Ω; T
j
=25°C
- 6 12 ns
t
r
rise time - 7 - ns
t
d(off)
turn-off delay time - 20 40 ns
t
f
fall time - 14 - ns
Source-drain diode
V
SD
source-drain voltage I
S
=115mA; V
GS
=0V; T
j
= 25 °C 0.47 0.7 1.2 V