NX7002AKW 60 V, single N-channel Trench MOSFET 11 July 2012 Product data sheet 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits • Very fast switching • Trench MOSFET technology • ESD protected 1.3 Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 1.4 Quick reference data Table 1.
NX7002AKW NXP Semiconductors 60 V, single N-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 G gate 2 S source 3 D drain Simplified outline Graphic symbol D 3 1 2 G SC-70 (SOT323) S 017aaa255 3. Ordering information Table 3. Ordering information Type number Package NX7002AKW Name Description Version SC-70 plastic surface-mounted package; 3 leads SOT323 4. Marking Table 4.
NX7002AKW NXP Semiconductors 60 V, single N-channel Trench MOSFET Symbol Parameter Conditions Min Max Unit Tsp = 25 °C - 1060 mW Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C - 170 mA Source-drain diode IS source current [1] [2] Tamb = 25 °C 2 Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm .
NX7002AKW NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa482 1 Limit RDSon = VDS/ID ID (A) (1) 10-1 (2) (3) (4) 10-2 (5) (6) 10-3 10-1 1 10 102 VDS (V) IDM = single pulse (1) tp = 100 µs (2) tp = 1 ms (3) tp = 10 ms (4) DC; Tsp = 25 °C (5) tp = 100 ms 2 (6) DC; Tamb = 25 °C; drain mounting pad 1 cm Fig. 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drainsource voltage 6. Thermal characteristics Table 6.
NX7002AKW NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa483 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.25 0.1 0.05 10 0.02 0.01 0 1 10-1 10-5 10-4 10-3 10-2 10-1 1 102 10 tp (s) 103 FR4 PCB, standard footprint Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 103 017aaa484 duty cycle = 1 Zth(j-a) (K/W) 0.75 102 0.33 0.2 0.5 0.25 0.1 0.05 10 0.02 0.
NX7002AKW NXP Semiconductors 60 V, single N-channel Trench MOSFET Symbol Parameter Conditions Min Typ Max Unit IGSS gate leakage current VGS = 20 V; VDS = 0 V; Tj = 25 °C - - 2 µA VGS = -20 V; VDS = 0 V; Tj = 25 °C - - 2 µA VGS = 10 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA VGS = -10 V; VDS = 0 V; Tj = 25 °C - - 0.5 µA VGS = 5 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = -5 V; VDS = 0 V; Tj = 25 °C - - 100 nA VGS = 10 V; ID = 100 mA; Tj = 25 °C - 3 4.
NX7002AKW NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa469 0.20 10 V ID (A) VGS = 3 V 3.5 V 017aaa470 10-3 5V ID (A) 0.15 10-4 (1) (2) (3) 0.10 2.5 V 10-5 0.05 2V 0 Fig. 6. 0 1 2 3 VDS (V) 10-6 4 0 1 2 Tj = 25 °C Tj = 25 °C; VDS = 5 V Output characteristics: drain current as a function of drain-source voltage; typical values (1) minimum values (2) typical values (3) maximum values Fig. 7.
NX7002AKW NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa473 0.20 (1) ID (A) a 0.15 1.5 0.10 1.0 0.05 0.5 (2) 0 0 1 017aaa474 2.0 (2) (1) 2 3 4 VGS (V) 0 -60 5 VDS > ID × RDSon 0 60 120 Tj (°C) 180 Fig. 11. Normalized drain-source on-state resistance as a function of junction temperature; typical values (1) Tj = 25 °C (2) Tj = 150 °C Fig. 10. Transfer characteristics: drain current as a function of gate-source voltage; typical values 017aaa475 2.
NX7002AKW NXP Semiconductors 60 V, single N-channel Trench MOSFET 017aaa477 10 VDS VGS (V) ID 8 VGS(pl) 6 VGS(th) VGS 4 QGS1 QGS2 QGS 2 QGD QG(tot) 017aaa137 0 0 0.2 0.4 0.6 QG (nC) Fig. 15. Gate charge waveform definitions 0.8 ID = 0.2 A; VDS = 30 V; Tamb = 25 °C Fig. 14. Gate-source voltage as a function of gate charge; typical values 017aaa478 0.20 IS (A) 0.15 (1) 0.10 (2) 0.05 0 0 0.4 0.8 VSD (V) 1.2 VGS = 0 V (1) Tj = 150 °C (2) Tj = 25 °C Fig. 16.
NX7002AKW NXP Semiconductors 60 V, single N-channel Trench MOSFET 8. Test information P t2 duty cycle δ = t1 t2 t1 t 006aaa812 Fig. 17. Duty cycle definition 9. Package outline 2.2 1.8 1.1 0.8 0.45 0.15 3 2.2 1.35 2.0 1.15 1 2 0.4 0.3 1.3 0.25 0.10 Dimensions in mm 04-11-04 Fig. 18. SC-70 (SOT323) 10. Soldering 2.65 1.85 1.325 solder lands solder resist 2 2.35 0.6 (3×) 3 1.3 1 0.5 (3×) solder paste occupied area Dimensions in mm 0.55 (3×) sot323_fr Fig. 19.
NX7002AKW NXP Semiconductors 60 V, single N-channel Trench MOSFET 4.6 2.575 1.425 (3×) solder lands solder resist occupied area 1.8 3.65 2.1 Dimensions in mm preferred transport direction during soldering 09 (2×) sot323_fw Fig. 20. Wave soldering footprint for SOT323 (SC-70) 11. Revision history Table 8. Revision history Data sheet ID Release date Data sheet status Change notice Supersedes NX7002AKW v.2 20120711 Product data sheet - NX7002AKW v.1 Modifications: • NX7002AKW v.
NX7002AKW NXP Semiconductors 60 V, single N-channel Trench MOSFET In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation lost profits, lost savings, business interruption, costs related to the removal or replacement of any products or rework charges) whether or not such damages are based on tort (including negligence), warranty, breach of contract or any other legal theory. 12. Legal information 12.
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NX7002AKW NXP Semiconductors 60 V, single N-channel Trench MOSFET 13. Contents 1 1.1 1.2 1.3 1.4 Product profile ....................................................... 1 General description .............................................. 1 Features and benefits ...........................................1 Applications .......................................................... 1 Quick reference data ............................................ 1 2 Pinning information ...................................
