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1. Product profile

1.1 General description

NPN high-voltage low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a small

SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

 High voltage

 Low collector-emitter saturation voltage V

CEsat

 High collector current capability I

and I

 High collector current gain (h

) at high I

 AEC-Q101 qualified

 Small SMD plastic package

1.3 Applications

 LED driver for LED chain module

 LCD backlighting

 Automotive power management

 Hook switch for wired telecom

 Switch Mode Power Supply (SMPS)

1.4 Quick reference data

[1] Pulse test: t

≤ 300 μs; δ≤0.02.

PBHV8118T

180 V, 1 A NPN high-voltage low V

CEsat

(BISS) transistor

Rev. 01 — 7 May 2010 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - 180 V

collector current - - 1 A

DC current gain V

=10V;

=50mA

[1]

100 250 -

Summary of content (13 pages)

PAGE 1
PBHV8118T 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Rev. 01 — 7 May 2010 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. 1.
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PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Graphic symbol 3 3 1 1 2 2 sym021 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBHV8118T - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4.
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PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) thermal resistance from junction to solder point [1] [1] in free air Min Typ Max Unit - - 417 K/W - - 70 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 006aab151 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.
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PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
PAGE 6
PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 006aac366 500 006aac367 2.0 hFE IB (mA) = 320 IC (A) 288 256 224 192 160 128 400 1.5 (1) 300 96 (2) 1.0 64 200 32 (3) 0.5 100 0 10−1 1 10 102 0.0 0.0 103 104 IC (mA) 1.0 2.0 3.0 4.0 5.0 VCE (V) Tamb = 25 °C VCE = 10 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. DC current gain as a function of collector current; typical values Fig 4. 006aac368 1.
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PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 006aac370 1 006aac371 10 VCEsat (V) VCEsat (V) 1 10−1 (1) (2) 10−1 (1) (2) 10−2 (3) (3) 10−2 10−3 10−1 1 10 102 103 104 IC (mA) 10−3 10−1 1 (1) IC/IB = 20 (2) Tamb = 25 °C (2) IC/IB = 10 (3) Tamb = −55 °C (3) IC/IB = 5 Collector-emitter saturation voltage as a function of collector current; typical values 006aac372 103 Fig 8.
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PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 8. Test information VBB RB oscilloscope VCC RC Vo (probe) (probe) 450 Ω 450 Ω oscilloscope R2 VI DUT R1 mlb826 Fig 11. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9.
PAGE 9
PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 13. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 14.
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PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBHV8118T v.1 20100507 Product data sheet - - PBHV8118T Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 01 — 7 May 2010 © NXP B.V. 2010. All rights reserved.
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PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 12
PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14.
PAGE 13
PBHV8118T NXP Semiconductors 180 V, 1 A NPN high-voltage low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .