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1. Product proﬁle

1.1 General description

PNP high-voltage low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a

SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

NPN complement: PMBTA45.

1.2 Features

n High voltage

n Low collector-emitter saturation voltage V

CEsat

n High collector current capability I

and I

n High collector current gain (h

) at high I

n AEC-Q101 qualiﬁed

1.3 Applications

n Electronic ballasts

n LED driver for LED chain module

n LCD backlighting

n Automotive motor management

n Flyback converters

n Hook switch for wired telecom

n Switch Mode Power Supply (SMPS)

1.4 Quick reference data

PBHV9050T

500 V, 150 mA PNP high-voltage low V

CEsat

(BISS) transistor

Rev. 01 — 16 September 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CESM

collector-emitter peak

voltage

=0V - - −500 V

CEO

collector-emitter voltage open base - - −500 V

collector current - - −0.15 A

DC current gain V

= −10 V;

= −50 mA

80 160 300

Summary of content (12 pages)

PAGE 1
PBHV9050T 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor Rev. 01 — 16 September 2009 Product data sheet 1. Product profile 1.1 General description PNP high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PMBTA45. 1.
PAGE 2
PBHV9050T NXP Semiconductors 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Graphic symbol 3 3 1 1 2 2 sym013 3. Ordering information Table 3. Ordering information Type number PBHV9050T Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4.
PAGE 3
PBHV9050T NXP Semiconductors 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −500 V VCEO collector-emitter voltage open base - −500 V VCESM collector-emitter peak voltage VBE = 0 V - −500 V VEBO emitter-base voltage open collector - −6 V IC collector current - −0.
PAGE 4
PBHV9050T NXP Semiconductors 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient Rth(j-sp) thermal resistance from junction to solder point [1] [1] in free air Min Typ Max Unit - - 417 K/W - - 70 K/W Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. 006aab691 103 Zth(j-a) (K/W) duty cycle = 1 0.
PAGE 5
PBHV9050T NXP Semiconductors 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
PAGE 6
PBHV9050T NXP Semiconductors 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor 006aab692 240 IB (mA) = −200 IC (A) (1) hFE 006aab693 −0.5 −180 −0.4 −160 180 −120 (2) −0.3 −140 −100 −80 120 −60 −40 −0.2 (3) −20 60 −0.1 0 −10−1 −1 −10 −102 0.0 −103 0 −1 −2 −3 IC (mA) VCE = −10 V −4 −5 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 3. DC current gain as a function of collector current; typical values 006aab694 −1.
PAGE 7
PBHV9050T NXP Semiconductors 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor 006aab696 −1 VCEsat (V) 006aab697 −1 VCEsat (V) (1) −10−1 (2) −10−1 (1) (3) (2) (3) −10−2 −10−1 −1 −10 −102 −103 −10−2 −10−1 −1 −10 −102 IC (mA) Tamb = 25 °C IC/IB = 5 (1) Tamb = 100 °C (1) IC/IB = 20 (2) Tamb = 25 °C (2) IC/IB = 10 (3) Tamb = −55 °C (3) IC/IB = 5 Fig 7.
PAGE 8
PBHV9050T NXP Semiconductors 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor 8. Test information VBB RB oscilloscope VCC RC Vo (probe) (probe) 450 Ω 450 Ω oscilloscope R2 VI DUT R1 mgd624 Fig 11. Test circuit for switching times 8.1 Quality information This product has been qualified in accordance with the Automotive Electronics Council (AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in automotive applications. 9.
PAGE 9
PBHV9050T NXP Semiconductors 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 13. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 14.
PAGE 10
PBHV9050T NXP Semiconductors 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBHV9050T_1 20090916 Product data sheet - - PBHV9050T_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
PAGE 11
PBHV9050T NXP Semiconductors 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 12
PBHV9050T NXP Semiconductors 500 V, 150 mA PNP high-voltage low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . .