Datasheet

PBLS2004D_1 © Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet Rev. 01— 23 June 2005 6 of 16
Philips Semiconductors
PBLS2004D
20 V PNP BISS loadswitch
7. Characteristics
Table 7: Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
TR1; PNP low V
CEsat
transistor
I
CBO
collector-base cut-off
current
V
CB
= −20 V; I
E
=0A - - −0.1 µA
V
CB
= −20 V; I
E
=0A;
T
j
= 150 °C
-- −50 µA
I
CES
collector-emitter
cut-off current
V
CE
= −20 V; V
BE
=0V - - −0.1 µA
I
EBO
emitter-base cut-off
current
V
EB
= −5 V; I
C
=0A - - −0.1 µA
h
FE
DC current gain V
CE
= −2 V; I
C
= −1 mA 220 495 -
V
CE
= −2 V; I
C
= −100 mA 220 440 -
V
CE
= −2 V; I
C
= −500 mA
[1]
220 310 -
V
CE
= −2 V; I
C
= −1A
[1]
155 220 -
V
CE
= −2 V; I
C
= −2A
[1]
60 120 -
V
CEsat
collector-emitter
saturation voltage
I
C
= −100 mA; I
B
= −1mA - −55 −90 mV
I
C
= −500 mA; I
B
= −50 mA
[1]
- −100 −150 mV
I
C
= −1 A; I
B
= −50 mA
[1]
- −200 −300 mV
I
C
= −1 A; I
B
= −100 mA
[1]
- −185 −280 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −1 A; I
B
= −100 mA
[1]
- 185 280 mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1 A; I
B
= −50 mA
[1]
- −0.95 −1.1 V
I
C
= −1 A; I
B
= −100 mA
[1]
- −1 −1.1 V
V
BEon
base-emitter
turn-on voltage
V
CE
= −5 V; I
C
= −1A
[1]
- −0.85 −1.1 V
t
d
delay time I
C
= −1 A; I
Bon
= −50 mA;
I
Boff
=50mA
-8 - ns
t
r
rise time - 34 - ns
t
on
turn-on time - 42 - ns
t
s
storage time - 140 - ns
t
f
fall time - 45 - ns
t
off
turn-off time - 185 - ns
f
T
transition frequency I
C
= −50 mA; V
CE
= −10 V;
f = 100 MHz
150 185 - MHz
C
c
collector capacitance V
CB
= −10 V; I
E
=i
e
=0A;
f=1MHz
-1520pF