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1. Product proﬁle

1.1 General description

PNP low V

CEsat

Breakthrough In Small Signal (BISS) transistor and NPN

Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device

(SMD) plastic package.

1.2 Features

n Low V

CEsat

(BISS) transistor and resistor-equipped transistor in one package

n Low threshold voltage (< 1 V) compared to MOSFET

n Low drive power required

n Space-saving solution

n Reduction of component count

1.3 Applications

n Supply line switches

n Battery charger switches

n High-side switches for LEDs, drivers and backlights

n Portable equipment

1.4 Quick reference data

[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al

, standard footprint.

[2] Pulse test: t

≤ 300 µs; δ≤ 0.02

PBLS6001D

60 V PNP BISS loadswitch

Rev. 02 — 7 September 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

TR1; PNP low V

CEsat

transistor

CEO

collector-emitter voltage open base - - −60 V

collector current (DC)

[1]

--−1A

CEsat

collector-emitter saturation

resistance

= −1A;

= −100 mA

[2]

- 255 340 mΩ

TR2; NPN resistor-equipped transistor

CEO

collector-emitter voltage open base - - 50 V

output current (DC) - - 100 mA

R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ

R2/R1 bias resistor ratio 0.8 1 1.2

Summary of content (16 pages)

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PBLS6001D 60 V PNP BISS loadswitch Rev. 02 — 7 September 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and NPN Resistor-Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. 1.
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PBLS6001D NXP Semiconductors 60 V PNP BISS loadswitch 2. Pinning information Table 2. Pinning Pin Description Simplified outline 1 emitter TR1 2 base TR1 3 output (collector) TR2 4 GND (emitter) TR2 5 input (base) TR2 6 collector TR1 6 5 4 1 2 3 Symbol 6 5 R1 4 R2 TR2 TR1 1 2 3 sym036 3. Ordering information Table 3. Ordering information Type number PBLS6001D Package Name Description Version SC-74 plastic surface mounted package; 6 leads SOT457 4. Marking Table 4.
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PBLS6001D NXP Semiconductors 60 V PNP BISS loadswitch 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PBLS6001D NXP Semiconductors 60 V PNP BISS loadswitch 006aaa461 0.8 Ptot (W) (1) 0.6 (2) (3) 0.4 0.2 0 0 40 80 120 160 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 1cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6.
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PBLS6001D NXP Semiconductors 60 V PNP BISS loadswitch 006aaa462 103 δ=1 0.75 0.5 0.33 102 0.2 0.1 Zth(j-a) (K/W) 0.05 0.02 0.01 10 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa463 103 Zth(j-a) (K/W) δ=1 0.75 0.5 0.33 0.2 102 0.1 0.05 10 0.02 0.
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PBLS6001D NXP Semiconductors 60 V PNP BISS loadswitch 006aaa464 103 Zth(j-a) (K/W) δ = 1 0.75 0.5 102 0.33 0.2 0.1 0.05 10 0.02 0.01 0 1 10−5 10−4 10−3 10−2 10−1 1 102 10 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values 7. Characteristics Table 7.
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PBLS6001D NXP Semiconductors 60 V PNP BISS loadswitch Table 7. Characteristics …continued Tamb = 25 °C unless otherwise specified Symbol Parameter Conditions Min Typ Max Unit td delay time - 11 - ns tr rise time IC = −0.
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PBLS6001D NXP Semiconductors 60 V PNP BISS loadswitch 006aaa474 600 006aaa475 −1 (1) hFE VCEsat (V) 400 (2) −10−1 (3) 200 0 −10−1 −1 (1) (2) (3) −10 −102 −103 −104 IC (mA) −10−2 −10−1 VCE = −5 V −1 −102 −103 −104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = −55 °C Fig 5. −10 TR1 (PNP): DC current gain as a function of collector current; typical values 006aaa476 −1.0 Fig 6.
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PBLS6001D NXP Semiconductors 60 V PNP BISS loadswitch 006aaa478 −2.0 IB (mA) = −35.0 −31.5 −28.0 −24.5 −21.0 IC (A) −1.6 006aaa479 103 RCEsat (Ω) −17.5 −14.0 102 −10.5 −1.2 −7.0 10 −0.8 (1) (2) (3) −3.5 1 −0.4 0.0 0 −1 −2 −3 −4 −5 VCE (V) 10−1 −10−1 Tamb = 25 °C −1 −10 −102 −103 −104 IC (mA) IC/IB = 20 (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 9. TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values 006aaa480 −1 Fig 10.
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PBLS6001D NXP Semiconductors 60 V PNP BISS loadswitch 006aaa015 103 006aaa014 103 hFE (1) (2) (3) 102 VCEsat (mV) 102 (1) (2) (3) 10 1 10−1 1 102 10 10 1 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 150 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 13. TR2 (NPN): DC current gain as a function of collector current; typical values 006aaa016 102 102 10 IC (mA) VI(on) (V) Fig 14.
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PBLS6001D NXP Semiconductors 60 V PNP BISS loadswitch 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 17. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 IC = −0.5 A; IBon = −25 mA; IBoff = 25 mA; R1 = open; R2 = 100 Ω; RB = 300 Ω; RC = 20 Ω Fig 18.
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PBLS6001D NXP Semiconductors 60 V PNP BISS loadswitch 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 0.26 0.10 1.9 Dimensions in mm 04-11-08 Fig 19. Package outline SOT457 (SC-74) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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PBLS6001D NXP Semiconductors 60 V PNP BISS loadswitch 11. Soldering 3.45 1.95 solder lands 0.95 solder resist 0.45 0.55 3.30 2.825 occupied area solder paste 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 20. Reflow soldering footprint 5.30 solder lands 5.05 0.45 1.45 4.45 solder resist occupied area 1.40 msc423 4.30 Dimensions in mm Fig 21. Wave soldering footprint PBLS6001D_2 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
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PBLS6001D NXP Semiconductors 60 V PNP BISS loadswitch 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBLS6001D_2 20090907 Product data sheet - PBLS6001D_1 Modifications: PBLS6001D_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
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PBLS6001D NXP Semiconductors 60 V PNP BISS loadswitch 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PBLS6001D NXP Semiconductors 60 V PNP BISS loadswitch 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . .