DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D088 PBR941 UHF wideband transistor Product specification Supersedes data of 1998 May 08 File under Discrete Semiconductors, SC14 1998 Aug 10
Philips Semiconductors Product specification UHF wideband transistor PBR941 FEATURES PINNING - SOT23 • Small size PIN • Low noise 1 base • Low distortion 2 emitter • High gain 3 collector DESCRIPTION • Gold metallization ensures excellent reliability. handbook, halfpage APPLICATIONS 3 3 • Communication and instrumentation systems. 1 DESCRIPTION Silicon NPN transistor in a surface mount 3-pin SOT23 package.
Philips Semiconductors Product specification UHF wideband transistor PBR941 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 1.
Philips Semiconductors Product specification UHF wideband transistor PBR941 CHARACTERISTICS Tj = 25 °C; unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics V(BR)CBO collector-base breakdown voltage IC = 100 µA; IE = 0 20 − − V V(BR)CEO collector-emitter breakdown voltage IC = 100 µA; IB = 0 10 − − V V(BR)EBO emitter-base breakdown voltage IE = 10 µA; IC = 0 1.
Philips Semiconductors Product specification UHF wideband transistor PBR941 MDA871 400 MDA872 120 handbook, halfpage handbook, halfpage Ptot (mW) hFE 300 80 200 40 100 0 0 0 50 100 150 Ts (°C) 200 10 0 20 30 50 40 IC (mA) VCE = 6 V. Fig.2 Power derating as a function of soldering point temperature. Fig.3 MDA873 0.5 Cre DC current gain as a function of collector current; typical values. MDA874 10 handbook, halfpage handbook, halfpage fT (GHz) (pF) 0.4 8 0.3 6 0.
Philips Semiconductors Product specification UHF wideband transistor PBR941 MDA875 20 gain MDA876 50 gain handbook, halfpage handbook, halfpage Gmax (dB) MSG 16 (dB) 40 GUM GUM MSG 12 30 8 20 4 10 Gmax 0 10 0 0 10 20 30 IC (mA) MSG 40 102 f = 1 GHz; VCE = 6 V. IC = 5 mA; VCE = 6 V. Fig.6 Fig.7 Gain as a function of collector current; typical values. MDA877 50 gain 103 f (MHz) 104 Gain as a function of frequency; typical values.
Philips Semiconductors Product specification UHF wideband transistor PBR941 MDA879 4 MDA880 4 handbook, halfpage handbook, halfpage F (dB) F (dB) 3 3 (1) (2) (1) (3) 2 2 (2) 1 1 (4) 0 10−1 VCE = 6 V. (1) f = 2000 MHz. (2) f = 1000 MHz. (3) 1 10 IC (mA) 0 102 102 (3) f = 500 MHz. (4) f = 900 MHz. VCE = 6 V. (1) IC = 30 mA. Fig.10 Minimum noise figure as a function of collector current, typical values. 1998 Aug 10 103 f (MHz) 104 (2) IC = 15 mA. (3) IC = 5 mA. Fig.
Philips Semiconductors Product specification UHF wideband transistor PBR941 APPLICATION INFORMATION SPICE parameters for the PBR941 die SEQUENCE No. PARAMETER VALUE UNIT SEQUENCE No. PARAMETER 39(2) VALUE UNIT Cbpb 40(2) Cbpe 84.00 fF AF 1.000 − KF 4 x 10−16 − 83.00 fF 1 IS 0.466 fA 41 2 BF 150.4 − 42 3 NF 1.000 − Notes 4 VAF 53.06 V 5 IKF 180.0 mA 1. These parameters have not been extracted, the default values are shown. 6 ISE 57.30 fA 7 NE 2.
Philips Semiconductors Product specification UHF wideband transistor PBR941 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0 180° 0.4 5 0.2 0.5 2 GHz 0.2 3 GHz 1 2 5 0° 0 1 GHz 40 MHz 500 MHz 0.2 200 MHz 0.5 −135° 5 100 MHz 2 −45° 1 MDA881 1.0 −90° VCE = 6 V; IC = 15 mA; Zo = 50 Ω. Fig.13 Common emitter input reflection coefficient (S11); typical values.
Philips Semiconductors Product specification UHF wideband transistor PBR941 90° handbook, full pagewidth 135° 45° 3 GHz 2 GHz 0.5 0.4 0.3 0.2 180° 1 GHz 500 MHz 200 MHz 0.1 0° 40 MHz −135° −45° −90° MDA883 VCE = 6 V; IC = 15 mA. Fig.15 Common emitter reverse transmission coefficient (S12); typical values. 90° handbook, full pagewidth 1.0 1 135° 0.8 45° 2 0.5 0.6 0.2 0.4 5 0.2 180° 0 0.2 0.5 1 5 0° 0 40 MHz 1 GHz 2 GHz 500 MHz 3 GHz 200 MHz 100 MHz 5 0.
Philips Semiconductors Product specification UHF wideband transistor PBR941 handbook, full pagewidth 90° unstable region source 1 135° 2 0.5 unstable region load 1.0 45° 0.8 0.6 0.2 0.4 5 ΓOPT G = 16 dB 0.2 0.5 180° 1 0.2 2 5 0° NF = 1.5 dB G = 15 dB NF = 1.7 dB NF = 1.9 dB G = 14 dB 0.2 0.5 −135° 0 5 2 −45° 1 MDA885 1.0 −90° f = 1 GHz; VCE = 6 V; IC = 5 mA; Zo = 50 Ω. Fig.17 Common emitter available gain circles; typical values.
Philips Semiconductors Product specification UHF wideband transistor PBR941 PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
Philips Semiconductors Product specification UHF wideband transistor PBR941 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications.
Philips Semiconductors Product specification UHF wideband transistor PBR941 NOTES 1998 Aug 10 14
Philips Semiconductors Product specification UHF wideband transistor PBR941 NOTES 1998 Aug 10 15
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