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Preliminary specification 2001 Jan 18

DISCRETE SEMICONDUCTORS

PBR941B

UHF wideband transistor

ook, halfpage

M3D088

Summary of content (13 pages)

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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PBR941B UHF wideband transistor Preliminary specification 2001 Jan 18
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Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B PINNING SOT23 FEATURES • Small size PIN • Low noise 1 base • Low distortion 2 emitter • High gain 3 collector DESCRIPTION • Gold metallization ensures excellent reliability. APPLICATIONS 3 handbook, halfpage • Communication and instrumentation systems. DESCRIPTION 1 Silicon NPN transistor in a surface mount 3-pin SOT23 package.
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Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 20 V VCEO collector-emitter voltage open base − 10 V VEBO emitter-base voltage open collector − 1.
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Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT DC characteristics V(BR)CBO collector-base breakdown voltage IC = 100 µA; IE = 0 20 − − V V(BR)CEO collector-emitter breakdown voltage IC = 100 µA; IB = 0 10 − − V V(BR)EBO emitter-base breakdown voltage IE = 10 µA; IC = 0 1.5 − − V VBEF forward base-emitter voltage IE = 25 mA − − 1.
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Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B MDA871 400 MCD974 160 handbook, halfpage handbook, halfpage Ptot (mW) hFE 300 120 200 70 100 40 0 0 50 100 150 Ts (°C) 0 200 0 10 20 30 40 50 IC (mA) VCE = 6 V. Fig.2 Power derating as a function of soldering point temperature. Fig.3 MGS498 DC current gain as a function of collector current; typical values. MCD975 10 0.5 handbook, halfpage handbook, halfpage fT (GHz) Cre (pF) 0.
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Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B MGS500 gain (dB) handbook, halfpage MSG gain (dB) Gmax 40 16 MGS501 50 20 handbook, halfpage GUM 12 30 8 20 4 10 GUM MSG Gmax 0 102 0 0 10 20 30 I C (mA) 40 103 f = 1 GHz; VCE = 6 V. GUM = maximum unilateral power gain. MSG = maximum stable gain. Gmax = maximum available gain. I C = 5 mA; VCE = 6 V. GUM = maximum unilateral power gain. MSG = maximum stable gain. Gmax = maximum available gain.
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Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B MGS504 4 MGS505 4 handbook, halfpage handbook, halfpage NF (dB) NF (dB) (1) 3 3 (2) (1) 2 (2) (3) 2 (3) 1 0 10−1 (4) (5) (6) 1 1 10 IC (mA) 0 102 102 VCE = 6 V. f (MHz) 104 VCE = 6 V. (1) f = 2 GHz. (4) f = 900 MHz. (1) IC = 30 mA. (2) f = 1.5 GHz. (5) f = 800 MHz. (2) IC = 15 mA. (3) f = 1 GHz. (6) f = 500 MHz. (3) IC = 5 mA. Fig.
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Philips Semiconductors Preliminary specification UHF wideband transistor handbook, full pagewidth PBR941B unstable region source unstable region load 90° 1.0 +1 135° 45° +2 + 0.5 0.8 0.6 + 0.2 0.4 +5 Γopt 0.2 (1) 180° 0.5 0 1 2 (4) 0° 0 (5) (3) f = 1 GHz; VCE = 6 V; I C = 5 mA; Zo = 50 Ω. 5 (2) (6) − 0.2 −5 (1) G = 17 dB. (2) G = 16 dB. (3) G = 15 dB. − 0.5 −135° (4) NF = 1.6 dB. −2 (5) NF = 1.8 dB. − 45° −1 (6) NF = 2 dB. 1.0 − 90° MGS506 Fig.
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Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B 90° handbook, full pagewidth 1.0 +1 135° 45° +2 + 0.5 0.8 0.6 + 0.2 0.4 +5 0.2 3 GHz 180° 0.2 0 0.5 1 2 GHz 2 5 0° 0 1 GHz 100 MHz 500 MHz − 0.2 −5 200 MHz −135° − 0.5 −2 − 45° −1 1.0 − 90° VCE = 6 V; IC = 15 mA; Zo = 50 Ω. MGS508 Fig.14 Common emitter input reflection coefficient (s 11); typical values.
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Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B 90° handbook, full pagewidth 135° 45° 3 GHz 2 GHz 180° 0.5 0.4 0.3 0.2 1 GHz 500 MHz 200 MHz 100 MHz 0.1 0° −135° − 45° − 90° MGS510 VCE = 6 V; IC = 15 mA. Fig.16 Common emitter reverse transmission coefficient (s12); typical values. 90° handbook, full pagewidth 1.0 +1 135° 0.8 45° +2 + 0.5 0.6 + 0.2 0.4 +5 0.2 180° 0.2 0 0.5 1 5 0° 0 1 GHz 500 MHz 2 GHz 100 MHz 3 GHz 200 MHz − 5 − 0.
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Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B PACKAGE OUTLINE Plastic surface mounted package; 3 leads SOT23 D E B A X HE v M A 3 Q A A1 1 2 e1 bp c w M B Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 max. bp c D E e e1 HE Lp Q v w mm 1.1 0.9 0.1 0.48 0.38 0.15 0.09 3.0 2.8 1.4 1.2 1.9 0.95 2.5 2.1 0.45 0.15 0.55 0.45 0.2 0.
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Philips Semiconductors Preliminary specification UHF wideband transistor PBR941B DATA SHEET STATUS DATA SHEET STATUS PRODUCT STATUS DEFINITIONS (1) Objective specification Development This data sheet contains the design target or goal specifications for product development. Specification may change in any manner without notice. Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be published at a later date.
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Philips Semiconductors – a worldwide company Argentina: see South America Australia: 3 Figtree Drive, HOMEBUSH, NSW 2140, Tel. +61 2 9704 8141, Fax. +61 2 9704 8139 Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 1 60 101 1248, Fax. +43 1 60 101 1210 Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6, 220050 MINSK, Tel. +375 172 20 0733, Fax. +375 172 20 0773 Belgium: see The Netherlands Brazil: see South America Bulgaria: Philips Bulgaria Ltd.