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1. Product proﬁle

1.1 General description

800 mA NPN low V

CEsat

Breakthrough In Small Signal (BISS) Resistor-Equipped

Transistors (RET) family in small plastic packages.

[1] Also available in SOT54A and SOT54 variant packages (see Section 2).

1.2 Features

1.3 Applications

1.4 Quick reference data

PBRN123Y series

NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ

Rev. 01 — 27 February 2007 Product data sheet

Table 1. Product overview

Type number Package

NXP JEITA JEDEC

PBRN123YK SOT346 SC-59A TO-236

PBRN123YS

[1]

SOT54 SC-43A TO-92

PBRN123YT SOT23 - TO-236AB

n 800 mA output current capability n Low collector-emitter saturation voltage

CEsat

n High current gain h

n Reduces component count

n Built-in bias resistors n Reduces pick and place costs

n Simpliﬁes circuit design n ±10 % resistor ratio tolerance

n Digital application in automotive and

industrial segments

n Switching loads

n Medium current peripheral driver

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - 40 V

output current

[1]

PBRN123YK, PBRN123YT - - 600 mA

PBRN123YS - - 800 mA

Summary of content (17 pages)

PAGE 1
PBRN123Y series NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ Rev. 01 — 27 February 2007 Product data sheet 1. Product profile 1.1 General description 800 mA NPN low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistors (RET) family in small plastic packages. Table 1.
PAGE 2
PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ Table 2. Quick reference data …continued Symbol Parameter IORM repetitive peak output current Conditions PBRN123YK, PBRN123YT tp ≤ 1 ms; δ ≤ 0.33 Min Typ Max Unit - - 800 mA kΩ R1 bias resistor 1 (input) 1.54 2.2 2.86 R2/R1 bias resistor ratio 4.1 4.55 5 [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. 2.
PAGE 3
PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 3. Ordering information Table 4. Ordering information Type number Package Name Description Version PBRN123YK SC-59A plastic surface-mounted package; 3 leads SOT346 PBRN123YS[1] SC-43A plastic single-ended leaded (through hole) package; SOT54 3 leads PBRN123YT - plastic surface-mounted package; 3 leads [1] SOT23 Also available in SOT54A and SOT54 variant packages (see Section 2 and Section 9). 4.
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PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
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PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 006aaa999 800 Ptot (mW) 600 400 200 0 −75 −25 25 75 125 175 Tamb (°C) FR4 PCB, standard footprint Fig 2. Power derating curve for SOT54 (SC-43A/TO-92) 6. Thermal characteristics Table 7.
PAGE 6
PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 006aab000 103 δ=1 Zth(j-a) (K/W) 0.75 0.50 102 0.33 0.20 0.10 0.05 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236); typical values 006aab001 103 Zth(j-a) (K/W) δ=1 102 0.75 0.50 0.33 0.20 0.10 0.05 10 0.
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PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 006aab002 103 Zth(j-a) (K/W) δ=1 102 0.75 0.50 0.33 0.20 0.10 10 0.05 0.02 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Ceramic PCB, Al2O3, standard footprint Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB) and SOT346 (SC-59A/TO-236); typical values 006aab003 103 Zth(j-a) (K/W) δ=1 102 0.75 0.50 0.33 0.20 0.10 10 0.
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PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = 30 V; IE = 0 A - - 100 nA ICEO collector-emitter cut-off current VCE = 30 V; IB = 0 A - - 0.5 µA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 A - - 0.
PAGE 9
PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 006aab022 104 006aab023 10−1 hFE (1) (2) (3) 103 VCEsat (V) (1) (2) 10−2 102 (3) 10 1 10−1 1 102 10 103 10−3 1 102 10 IC (mA) VCE = 5 V IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 7. DC current gain as a function of collector current; typical values 006aab024 1 103 IC (mA) Fig 8.
PAGE 10
PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 006aab026 10 VI(on) (V) 006aab027 10 VI(off) (V) (1) 1 (1) 1 (2) (2) (3) (3) 10−1 10−1 1 10 102 103 10−1 10−1 IC (mA) VCE = 0.3 V 102 10 IC (mA) VCE = 5 V (1) Tamb = −40 °C (1) Tamb = −40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 11. On-state input voltage as a function of collector current; typical values Fig 12.
PAGE 11
PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 8. Package outline 1.3 1.0 3.1 2.7 3 0.45 0.38 4.2 3.6 0.6 0.2 0.48 0.40 3.0 1.7 2.5 1.3 1 2 4.8 4.4 1 2.54 3 1.27 2 0.50 0.35 1.9 0.26 0.10 Dimensions in mm 5.2 5.0 Dimensions in mm 04-11-11 Fig 13. Package outline SOT346 (SC-59A/TO-236) 04-11-16 Fig 14. Package outline SOT54 (SC-43A/TO-92) 0.45 0.38 0.45 0.38 4.2 3.6 14.5 12.7 4.2 3.6 1.27 0.48 0.40 3 max 1 2.5 max 0.48 0.40 1 2 4.8 4.
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PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 13
PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 4.70 2.80 solder lands solder resist occupied area Dimensions in mm 3 5.20 4.60 1.20 1 2 sot346 1.20 (2x) 3.40 preferred transport direction during soldering Fig 19. Wave soldering footprint SOT346 (SC-59A/TO-236) 2.90 2.50 0.85 2 1 solder lands 1.30 3.00 0.85 2.70 solder resist solder paste 3 occupied area 0.60 (3x) Dimensions in mm 0.50 (3x) 0.60 (3x) 1.00 3.30 sot023 Fig 20.
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PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 3.40 1.20 (2x) solder lands solder resist occupied area 2 1 4.60 4.00 1.20 3 Dimensions in mm 2.80 preferred transport direction during soldering 4.50 sot023 Fig 21. Wave soldering footprint SOT23 (TO-236AB) PBRN123Y_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev.
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PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PBRN123Y_SER_1 20070227 Product data sheet - - PBRN123Y_SER_1 Product data sheet © NXP B.V. 2007. All rights reserved. Rev.
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PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
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PBRN123Y series NXP Semiconductors NPN 800 mA, 40 V BISS RETs; R1 = 2.2 kΩ, R2 = 10 kΩ 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .