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1. Product proﬁle

1.1 General description

800 mA PNP low V

CEsat

Breakthrough In Small Signal (BISS) Resistor-Equipped

Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic

package.

NPN complement: PBRN123ET.

1.2 Features

1.3 Applications

1.4 Quick reference data

[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for

collector 1 cm

[2] Device mounted on a ceramic PCB, Al

, standard footprint.

[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

PBRP123ET

PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ

Rev. 01 — 16 January 2008 Product data sheet

n 800 mA repetitive peak output current n Low collector-emitter saturation voltage

CEsat

n High current gain h

n Reduces component count

n Built-in bias resistors n Reduces pick and place costs

n Simpliﬁes circuit design n ±10 % resistor ratio tolerance

n Digital application in automotive and

industrial segments

n Switching loads

n Medium current peripheral driver

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - −40 V

output current

[1][2]

--−600 mA

ORM

repetitive peak output current t

≤ 1 ms;

δ≤0.33

[3]

--−800 mA

R1 bias resistor 1 (input) 1.54 2.2 2.86 kΩ

R2/R1 bias resistor ratio 0.9 1 1.1

Summary of content (12 pages)

PAGE 1
PBRP123ET PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 01 — 16 January 2008 Product data sheet 1. Product profile 1.1 General description 800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package. NPN complement: PBRN123ET. 1.
PAGE 2
PBRP123ET NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 2. Pinning information Table 2. Pinning Pin Description 1 input (base) 2 GND (emitter) 3 Simplified outline Symbol 3 3 R1 output (collector) 1 1 2 R2 2 sym003 3. Ordering information Table 3. Ordering information Type number PBRP123ET Package Name Description Version - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4.
PAGE 3
PBRP123ET NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 4
PBRP123ET NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Rth(j-a) thermal resistance from junction to ambient in free air Rth(j-sp) Min Typ Max Unit [1] - - 500 K/W [2] - - 338 K/W [3] - - 219 K/W - - 105 K/W thermal resistance from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PAGE 5
PBRP123ET NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 006aab001 103 Zth(j-a) (K/W) δ=1 102 0.75 0.50 0.33 0.20 0.10 0.05 10 0.02 0.01 0 1 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration for SOT23 (TO-236AB); typical values 006aab002 103 Zth(j-a) (K/W) δ=1 102 0.75 0.50 0.33 0.20 0.10 10 0.05 0.02 0.
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PBRP123ET NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit ICBO collector-base cut-off current VCB = −30 V; IE = 0 A - - −100 nA ICEO collector-emitter cut-off VCE = −30 V; current IB = 0 A - - −0.
PAGE 7
PBRP123ET NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 006aab085 103 006aab086 −10−1 hFE 102 (1) (2) (3) VCEsat (V) (1) (2) (3) 10 1 10−1 −10−1 −1 −10 −102 −103 −10−2 −1 −10 IC (mA) VCE = −5 V IC/IB = 20 (1) Tamb = 100 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −40 °C (3) Tamb = −40 °C Fig 5. DC current gain as a function of collector current; typical values 006aab087 −1 VCEsat (V) Fig 6.
PAGE 8
PBRP123ET NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 006aab089 −10 006aab090 −10 VI(on) (V) VI(off) (V) −1 −10−1 −10−1 −1 (1) (2) (3) −1 −10 −102 (1) (2) (3) −10−1 −10−1 −103 −1 −10 IC (mA) −102 IC (mA) VCE = −0.3 V VCE = −5 V (1) Tamb = −40 °C (1) Tamb = −40 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Fig 9. On-state input voltage as a function of collector current; typical values Fig 10.
PAGE 9
PBRP123ET NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.[1] Type number PBRP123ET [1] Package Description SOT23 Packing quantity 4 mm pitch, 8 mm tape and reel 3000 10000 -215 -235 For further information and the availability of packing methods, see Section 13. 10. Soldering 2.90 2.50 0.85 2 1 solder lands 1.30 3.00 2.70 0.
PAGE 10
PBRP123ET NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 11. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBRP123ET_1 20080116 Product data sheet - - PBRP123ET_1 Product data sheet © NXP B.V. 2008. All rights reserved. Rev.
PAGE 11
PBRP123ET NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification.
PAGE 12
PBRP123ET NXP Semiconductors PNP 800 mA, 40 V BISS RET; R1 = 2.2 kΩ, R2 = 2.2 kΩ 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description. . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data. . . . . . . . . . . . . . . . . . . . .