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1. Product profile

1.1 General description

Combination of PNP low V

CEsat

Breakthrough In Small Signal (BISS) transistor and

N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118

Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

 Very low collector-emitter saturation voltage V

CEsat

 High collector current capability I

and I

 High collector current gain (h

) at high I

 High energy efficiency due to less heat generation

 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

1.4 Quick reference data

PBSM5240PF

40 V, 2 A PNP low V

CEsat

(BISS) transistor with N-channel

Trench MOSFET

Rev. 2 — 20 April 2011 Product data sheet

 Loadswitch  Battery-driven devices

 Power management  Charging circuits

 Power switches (e.g. motors, fans)

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

PNP low V

CEsat

(BISS) transistor

CEO

collector-emitter voltage open base - - −40 V

collector current

[1]

- −1.8 A

CRM

repetitive peak collector

current

[1][5]

--−2A

peak collector current single pulse; t

≤ 1ms

[1]

--−3A

CEsat

collector-emitter

saturation resistance

= −500 mA;

= −50 mA

[2]

- 240 340 mΩ

Summary of content (20 pages)

PAGE 1
PBSM5240PF 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET Rev. 2 — 20 April 2011 Product data sheet 1. Product profile 1.1 General description Combination of PNP low VCEsat Breakthrough In Small Signal (BISS) transistor and N-channel Trench MOSFET. The device is housed in a leadless medium power SOT1118 Surface-Mounted Device (SMD) plastic package. 1.
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PBSM5240PF NXP Semiconductors 40 V, 2 A PNP BISS/Trench MOSFET module Table 1. Quick reference data …continued Symbol Parameter Conditions Min Typ Max Unit - - 30 V N-channel Trench MOSFET VDS drain-source voltage Tamb = 25 °C VGS gate-source voltage Tamb = 25 °C ID drain current RDSon drain-source on-state resistance - - ±8 V Tamb = 25 °C; VGS = 10 V [3] - - 0.66 A Tj = 25 °C; VGS = 4.5 V; ID = 0.
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PBSM5240PF NXP Semiconductors 40 V, 2 A PNP BISS/Trench MOSFET module 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit PNP low VCEsat (BISS) transistor VCBO collector-base voltage open emitter - −40 V VCEO collector-emitter voltage open base - −40 V VEBO emitter-base voltage open collector collector current IC - −5 V [1] - −1.
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PBSM5240PF NXP Semiconductors 40 V, 2 A PNP BISS/Trench MOSFET module 006aac608 1.4 Ptot (W) 1.2 (1) (2) 1.0 (3) 0.8 0.6 (4) 0.4 0.2 0.0 –75 –25 25 75 125 175 Tamb (°C) (1) FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2 (2) FR4 PCB, single-sided copper, mounting pad for collector 6 cm2 (3) FR4 PCB, single-sided copper, mounting pad for collector 1 cm2 (4) FR4 PCB, single-sided copper, standard footprint Fig 1.
PAGE 5
PBSM5240PF NXP Semiconductors 40 V, 2 A PNP BISS/Trench MOSFET module 006aac609 10 ID (A) Limit RDSon = VDS/ID 1 (1) (2) (3) 10–1 (4) (5) 10–2 10–1 1 10 VDS (V) 102 IDM = single pulse (1) tp = 1 ms (2) DC; Tsp = 25 °C (3) tp = 10 ms (4) tp = 100 ms (5) DC; Tamb = 25 °C; drain mounting pad 1 cm2 Fig 4.
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PBSM5240PF NXP Semiconductors 40 V, 2 A PNP BISS/Trench MOSFET module 6. Thermal characteristics Table 6.
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PBSM5240PF NXP Semiconductors 40 V, 2 A PNP BISS/Trench MOSFET module 006aac611 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0 1 –5 10 0.01 10–4 10–3 10–2 10–1 1 10 102 tp (s) 103 FR4 PCB, single-sided copper, mounting pad for collector 1 cm2 Fig 6. PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac612 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.
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PBSM5240PF NXP Semiconductors 40 V, 2 A PNP BISS/Trench MOSFET module 006aac613 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 10 0.1 0.05 0.02 0 1 –5 10 0.01 10–4 10–3 10–2 10–1 1 102 10 tp (s) 103 FR4 PCB, 4-layer copper, mounting pad for collector 1 cm2 Fig 8. PNP transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac614 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.1 0.25 0.2 10 0 1 10–3 0.
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PBSM5240PF NXP Semiconductors 40 V, 2 A PNP BISS/Trench MOSFET module 7. Characteristics Table 7. Characteristics for PNP low VCEsat transistor Tamb = 25 °C unless otherwise specified.
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PBSM5240PF NXP Semiconductors 40 V, 2 A PNP BISS/Trench MOSFET module 006aaa465 1200 hFE 800 −2.4 006aaa469 IC (A) IB (mA) = −24 −21.6 −19.2 −16.8 −14.4 −12 −9.6 −1.6 (1) −7.2 (2) −4.8 −0.8 400 −2.4 (3) 0 −10−1 −1 −10 −102 −103 −104 IC (mA) 0 0 VCEsat = −5 V −1 −2 −3 −4 −5 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 10. PNP transistor: DC current gain as a function of collector current; typical values 006aac615 –1.6 Fig 11.
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PBSM5240PF NXP Semiconductors 40 V, 2 A PNP BISS/Trench MOSFET module 006aaa466 −1 006aaa471 −10 VCEsat (V) VCEsat (V) −1 −10−1 −10−1 (1) (2) (1) (2) −10−2 −10−1 −10−2 (3) −1 −10 −102 −103 −104 IC (mA) (3) −10−3 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 14.
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PBSM5240PF NXP Semiconductors 40 V, 2 A PNP BISS/Trench MOSFET module Table 8. Characteristics for N-channel Trench MOSFET Tj = 25 °C unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit 30 - - V 27 - - V Tj = 25 °C 0.45 0.7 0.95 V Tj = 150 °C 0.25 - - V Tj = −55 °C - - 1.15 V Tj = 25 °C - - 1 μA Tj = 150 °C - - 100 μA - 10 ±100 nA Tj = 25 °C - 370 580 mΩ Tj = 150 °C - 663 985 mΩ VGS = 2.5 V; ID = 0.1 A - 440 690 mΩ VGS = 1.
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PBSM5240PF NXP Semiconductors 40 V, 2 A PNP BISS/Trench MOSFET module 03an94 2.5 4.5 ID (A) 3 03am43 10−3 2.5 ID (A) 2 2 10−4 min typ max 1.5 1.8 1 10−5 VGS (V) = 1.5 0.5 10−6 0 0 0.5 1 1.5 VDS (V) 2 0 0.4 0.8 1.2 VGS (V) Tj = 25 °C Tj = 25 °C; VDS = 5 V Fig 18. MOSFET: Output characteristics: drain current as a function of drain-source voltage; typical values 006aac616 1.0 Fig 19. MOSFET: Sub-threshold drain current as a function of gate-source voltage 03an96 2.
PAGE 14
PBSM5240PF NXP Semiconductors 40 V, 2 A PNP BISS/Trench MOSFET module 006aac618 1.8 03aj65 1.2 VGS(th) (V) a 0.9 max 1.2 typ 0.6 min 0.6 0.3 0.0 –60 0 60 120 Tj (°C) 180 0 −60 0 60 120 180 Tj (°C) ID = 1 mA; VDS = VGS R DSon a = ----------------------------R DSon ( 25°C ) Fig 22. MOSFET: Normalized drain-source on-state resistance as a function of junction temperature; typical values 03an98 102 Fig 23.
PAGE 15
PBSM5240PF NXP Semiconductors 40 V, 2 A PNP BISS/Trench MOSFET module 03an97 1 VGS = 0 V IS (A) 0.8 VDS ID 0.6 VGS(pl) 0.4 VGS(th) VGS 0.2 QGS1 150 °C QGS2 QGS QGD QG(tot) Tj = 25 °C 0 0 0.2 0.4 0.6 0.8 1 VSD (V) 017aaa137 Fig 26. MOSFET: Gate charge waveform definitions Fig 27. MOSFET: Source current as a function of source-drain voltage; typical values 8. Package outline 0.65 max 2.1 1.9 0.04 max 1.1 0.9 2.1 1.9 0.77 0.57 (2×) 0.54 0.44 (2×) 3 4 1 6 0.65 (4×) 0.35 0.
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PBSM5240PF NXP Semiconductors 40 V, 2 A PNP BISS/Trench MOSFET module 10. Soldering 2.1 0.65 0.49 0.65 0.49 0.3 0.4 (6×) (6×) solder lands 0.875 solder paste 1.05 1.15 (2×) (2×) 2.25 solder resist 0.875 occupied area Dimensions in mm 0.35 (6×) 0.72 (2×) 0.45 (6×) 0.82 (2×) sot1118_fr Reflow soldering is the only recommended soldering method. Fig 29. Reflow soldering footprint SOT1118 PBSM5240PF Product data sheet All information provided in this document is subject to legal disclaimers.
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PBSM5240PF NXP Semiconductors 40 V, 2 A PNP BISS/Trench MOSFET module 11. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSM5240PF v.2 20110420 Product data sheet - PBSM5240PF v.1 Modifications: PBSM5240PF v.1 PBSM5240PF Product data sheet • • • • • Section 1.1 “General description”: updated. Section 2 “Pinning information”: updated. Table 1, 5, 6, 7 and 8: updated according to the last measurements. Figure 1 to 27: added.
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PBSM5240PF NXP Semiconductors 40 V, 2 A PNP BISS/Trench MOSFET module 12. Legal information 12.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 19
PBSM5240PF NXP Semiconductors 40 V, 2 A PNP BISS/Trench MOSFET module Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. Non-automotive qualified products — Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use.
PAGE 20
PBSM5240PF NXP Semiconductors 40 V, 2 A PNP BISS/Trench MOSFET module 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . .