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DATA SHEET

Product data sheet

Supersedes data of 2003 Jun 17

2003 Sep 15

DISCRETE SEMICONDUCTORS

PBSS2515M

15 V, 0.5 A

NPN low V

CEsat

(BISS) transistor

M3D883

BOTTOM VIEW

Summary of content (9 pages)

PAGE 1
DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2515M 15 V, 0.
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NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2515M FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat SYMBOL • High collector current capability IC and ICM VCEO collector-emitter voltage 15 V IC collector current (DC) 500 mA ICM peak collector current 1 A RCEsat equivalent on-resistance <500 mΩ • High efficiency leading to reduced heat generation • Reduced printed-circuit board requirements. PARAMETER MAX.
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NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2515M LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
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NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2515M CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX.
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NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2515M MLE098 600 MLE100 1200 VBE handbook, halfpage handbook, halfpage (1) (mV) hFE 1000 (1) 400 800 (2) (2) 600 200 (3) (3) 400 0 10−1 1 10 102 IC (mA) 200 10−1 103 VCE = 2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values.
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NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2515M MLE099 1 handbook, halfpage (3) IC (A) MLE103 102 handbook, halfpage (1) (2) RCEsat 0.8 (Ω) (4) (5) 10 (6) 0.6 (7) (1) (8) (2) 0.4 (3) (9) 1 (10) 0.2 10−1 10−1 0 0 0.5 1 2 1.5 VCE (V) Tamb = 25 °C. (1) (2) (3) (4) IB = 7 mA. IB = 6.3 mA. IB = 5.6 mA. IB = 4.9 mA. IB = 4.2 mA. IB = 3.5 mA. IB = 2.8 mA. IB = 2.1 mA. 102 IC (mA) 103 (1) Tamb = 150 °C. (2) Tamb = 25 °C.
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NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2515M PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1.
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NXP Semiconductors Product data sheet 15 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2515M DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
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NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.