DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS2515VPN 15 V low VCE(sat) NPN/PNP transistor Product data sheet Supersedes data of 2001 Nov 07 2005 Jan 11
NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor FEATURES PBSS2515VPN QUICK REFERENCE DATA • 300 mW total power dissipation SYMBOL • Very small 1.6 × 1.2 mm ultra thin package VCEO collector-emitter voltage 15 V ICM peak collector current 1 A RCEsat equivalent on-resistance <500 mΩ • Excellent coplanarity due to straight leads • Low collector-emitter saturation voltage PARAMETER MAX.
NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX.
NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN MLD643 600 MLD645 1200 VBE handbook, halfpage handbook, halfpage (1) (mV) hFE 1000 (1) 400 800 (2) (2) 600 200 (3) (3) 400 0 10−1 1 10 102 IC (mA) 200 10−1 103 1 TR1 (NPN) VCE = 2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. TR1 (NPN) VCE = 2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.
NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN MLD648 102 handbook, halfpage MLD644 1200 handbook, halfpage RCEsat 10 (3) (4) IC (mA) (Ω) (2) (1) (5) 800 (6) (1) (7) (2) (8) (3) 1 400 (9) (10) 10−1 10−1 1 10 102 IC (mA) 0 103 0 4 2 6 8 10 VCE (V) TR1 (NPN) Tamb = 25 °C. (1) (2) (3) (4) IB = 4.6 mA. IB = 4.14 mA. IB = 3.68 mA. IB = 3.22 mA. (5) IB = 2.76 mA. TR1 (NPN) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C.
NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN MLD649 600 MLD651 −1200 VBE handbook, halfpage handbook, halfpage hFE (mV) (1) −1000 (1) 400 −800 (2) (2) −600 200 (3) (3) −400 0 −10−1 −1 −10 −200 −10−1 −103 −102 IC (mA) TR2 (PNP) VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. −1 (3) Tamb = −55 °C. TR2 (PNP) VCE = −2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.8 Fig.
NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN MLD654 103 handbook, halfpage MLD650 −1200 handbook, halfpage RCEsat (Ω) (3) (4) IC (mA) (2) (1) 102 (5) −800 (6) (7) 10 (8) −400 1 (1) (2) 10−1 −10−1 (9) −1 −10 (10) (3) −102 0 −103 IC (mA) 0 −4 −2 −6 −8 −10 VCE (V) TR2 (PNP) Tamb = 25 °C. IB = −7 mA. IB = −6.3 mA. IB = −5.6 mA. IB = −4.9 mA. (5) IB = −4.2 mA. (1) (2) (3) (4) TR2 (PNP) IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C.
NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN PACKAGE OUTLINE Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.
NXP Semiconductors Product data sheet 15 V low VCE(sat) NPN/PNP transistor PBSS2515VPN DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
