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DATA SHEET

Product data sheet 2003 Jul 22

DISCRETE SEMICONDUCTORS

PBSS2540M

40 V, 0.5 A

NPN low V

CEsat

(BISS) transistor

M3D883

BOTTOM VIEW

Summary of content (9 pages)

PAGE 1
DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2540M 40 V, 0.
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NXP Semiconductors Product data sheet 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat SYMBOL • High collector current capability IC and ICM VCEO collector-emitter voltage 40 V IC collector current (DC) 500 mA ICM peak collector current 1 A RCEsat equivalent on-resistance <500 mΩ • High efficiency leading to reduced heat generation • Reduced printed-circuit board requirements. PARAMETER MAX.
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NXP Semiconductors Product data sheet 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
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NXP Semiconductors Product data sheet 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX.
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NXP Semiconductors Product data sheet 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M MHC082 1200 MHC085 1200 handbook, halfpage handbook, halfpage VBE (mV) hFE 1000 1000 (1) 800 (1) 800 600 (2) (2) 600 400 (3) 400 200 0 10−1 1 10 102 IC (mA) (3) 200 10−1 103 VCE = 2 V. VCE = 2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.
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NXP Semiconductors Product data sheet 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M MHC083 1200 IC (mA) 1000 RCEsat (Ω) (1) (2) (3) (5) 800 MHC087 103 handbook, halfpage handbook, halfpage 102 (4) (6) (7) (8) 10 (9) 600 (10) (1) (2) (3) 400 1 200 10−1 10−1 0 0 1 2 3 4 5 VCE (V) Tamb = 25 °C. (1) (2) (3) (4) IB = 25 mA. IB = 22.5 mA. IB = 20 mA. IB = 17.5 mA. IB = 15 mA. IB = 12.5 mA. IB = 10 mA. IB = 7.5 mA. 102 IC (mA) 103 (1) Tamb = 150 °C. (2) Tamb = 25 °C.
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NXP Semiconductors Product data sheet 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1.
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NXP Semiconductors Product data sheet 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
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NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors. No changes were made to the content, except for the legal definitions and disclaimers. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.