PBSS302PX 20 V, 5.1 A PNP low VCEsat (BISS) transistor Rev. 02 — 20 November 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT89 (SC-62/TO-243) small and flat lead Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS302NX. 1.
PBSS302PX NXP Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 emitter 2 collector 3 base Simplified outline Symbol 2 3 3 2 1 1 sym079 3. Ordering information Table 3. Ordering information Type number PBSS302PX Package Name Description Version SC-62 plastic surface-mounted package; collector pad for good heat transfer; 3 leads SOT89 4. Marking Table 4.
PBSS302PX NXP Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VCBO collector-base voltage open emitter - −20 V VCEO collector-emitter voltage open base - −20 V VEBO emitter-base voltage open collector - −5 V IC collector current - −5.1 A ICM peak collector current single pulse; tp ≤ 1 ms - −10.
PBSS302PX NXP Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - - 208 K/W [2] - - 76 K/W [3] - - 60 K/W - - 20 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PBSS302PX NXP Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 006aaa558 102 δ=1 0.75 Zth(j-a) (K/W) 0.50 0.33 0.20 10 0.10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa559 102 δ=1 0.75 Zth(j-a) (K/W) 0.50 0.33 0.20 10 0.10 0.05 0.02 0.
PBSS302PX NXP Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified. Symbol Parameter ICBO Conditions collector-base cut-off VCB = −20 V; IE = 0 A current VCB = −20 V; IE = 0 A; Tj = 150 °C Typ Max Unit - - −100 nA - - −50 μA - - −100 nA IEBO emitter-base cut-off current VEB = −5 V; IC = 0 A hFE DC current gain VCE = −2 V; IC = −0.
PBSS302PX NXP Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 006aaa596 1000 hFE 006aaa602 −14 IC (A) −12 IB (mA) = −100 800 −90 −80 −70 −60 −50 −40 −30 −10 (1) 600 −8 400 (2) 200 (3) −6 −20 −4 −10 −2 0 −10−1 −1 −10 −102 0 −103 −104 IC (mA) −1 0 VCE = −2 V −2 −3 −4 −5 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values 006aaa597 −1.2 VBE (V) Fig 6.
PBSS302PX NXP Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 006aaa598 −1 006aaa599 −10 VCEsat (V) VCEsat (V) −1 −10−1 −10−1 −10−2 (1) (2) (3) (1) (2) −10−2 (3) −10−3 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−3 −10−1 −1 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C Fig 9.
PBSS302PX NXP Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VCC = −12.5 V; IC = −3 A; IBon = −0.15 A; IBoff = 0.15 A Fig 14.
PBSS302PX NXP Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 9. Package outline 4.6 4.4 1.8 1.4 1.6 1.4 2.6 2.4 4.25 3.75 1 2 1.2 0.8 3 0.53 0.40 1.5 0.48 0.35 0.44 0.23 3 Dimensions in mm 06-08-29 Fig 15. Package outline SOT89 (SC-62/TO-243) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PBSS302PX NXP Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 11. Soldering 4.75 2.25 2.00 1.90 1.20 solder lands 0.85 0.20 solder resist occupied area 1.70 1.20 solder paste 4.60 4.85 0.50 1.20 Dimensions in mm 1.20 1.00 (3x) 3 2 1 msa442 0.60 (3x) 0.70 (3x) 3.70 3.95 Fig 16. Reflow soldering footprint SOT89 (SC-62) 6.60 2.40 3.50 2 7.60 0.50 3 1 1.20 3.00 solder lands solder resist occupied area Dimensions in mm preferred transport direction during soldering 1.50 0.
PBSS302PX NXP Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 12. Mounting 32 mm 30 mm 32 mm 40 mm 2.5 mm 20 mm 40 mm 1 mm 3 mm 2.5 mm 2.5 mm 1 mm 1 mm 0.5 mm 0.5 mm 5 mm 3.96 mm 5 mm 3.96 mm 1.6 mm 001aaa234 PCB thickness: 1.6 mm 001aaa235 PCB thickness = 1.6 mm FR4 PCB = 1.6 mm ceramic PCB = 0.635 mm Fig 18. FR4 PCB, standard footprint; ceramic PCB, Al2O3, standard footprint SOT89 (SC-62) PBSS302PX_2 Product data sheet Fig 19.
PBSS302PX NXP Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 13. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS302PX_2 20091120 Product data sheet - PBSS302PX_1 Modifications: PBSS302PX_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
PBSS302PX NXP Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 14. Legal information 14.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PBSS302PX NXP Semiconductors 20 V, 5.1 A PNP low VCEsat (BISS) transistor 16. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 14 14.1 14.2 14.3 14.4 15 16 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .