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1. Product profile

1.1 General description

PNP low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74)

small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS305ND.

1.2 Features

 Low collector-emitter saturation voltage V

CEsat

 High collector current capability I

and I

 High collector current gain (h

) at high I

 High efficiency due to less heat generation

 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

 High-voltage DC-to-DC conversion

 High-voltage MOSFET gate driving

 High-voltage motor control

 High-voltage power switches (e.g. motors, fans)

 Thin Film Transistor (TFT) backlight inverter

 Automotive applications

1.4 Quick reference data

[1] Device mounted on a ceramic PCB, Al

, standard footprint.

[2] Pulse test: t

≤ 300 μs; δ≤0.02.

PBSS305PD

100 V, 2 A PNP low V

CEsat

(BISS) transistor

Rev. 02 — 8 December 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - −100 V

collector current

[1]

--−2A

peak collector current single pulse;

≤ 1ms

--−3A

CEsat

collector-emitter

saturation resistance

= −2A;

= −200 mA

[2]

- 88 125 mΩ

Summary of content (15 pages)

PAGE 1
PBSS305PD 100 V, 2 A PNP low VCEsat (BISS) transistor Rev. 02 — 8 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT457 (SC-74) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS305ND. 1.
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PBSS305PD NXP Semiconductors 100 V, 2 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 collector 2 collector 3 base 4 emitter 5 collector 6 collector Simplified outline 6 5 Symbol 4 1, 2, 5, 6 3 1 2 3 4 sym030 3. Ordering information Table 3. Ordering information Type number PBSS305PD Package Name Description Version SC-74 plastic surface-mounted package (TSOP6); 6 leads SOT457 4. Marking Table 4.
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PBSS305PD NXP Semiconductors 100 V, 2 A PNP low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PBSS305PD NXP Semiconductors 100 V, 2 A PNP low VCEsat (BISS) transistor 006aaa270 1600 Ptot (mW) 1200 (1) 800 (2) (3) (4) 400 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, mounting pad for collector 1 cm2 (4) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6.
PAGE 5
PBSS305PD NXP Semiconductors 100 V, 2 A PNP low VCEsat (BISS) transistor 006aaa271 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa272 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.
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PBSS305PD NXP Semiconductors 100 V, 2 A PNP low VCEsat (BISS) transistor 006aaa273 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 6 cm2 Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa751 103 Zth(j-a) (K/W) 102 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.
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PBSS305PD NXP Semiconductors 100 V, 2 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
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PBSS305PD NXP Semiconductors 100 V, 2 A PNP low VCEsat (BISS) transistor 006aaa743 600 006aaa744 −6 IB = −750 mA −675 −600 IC −525 (A) −450 −375 −4 −300 hFE (1) 400 −225 −150 (2) −75 200 −2 (3) 0 −10−1 −1 −10 −102 0 −103 −104 IC (mA) 0 VCE = −2 V −0.4 −0.8 −1.2 −1.6 −2.0 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 6. DC current gain as a function of collector current; typical values 006aaa745 −1.2 VBE (V) Fig 7.
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PBSS305PD NXP Semiconductors 100 V, 2 A PNP low VCEsat (BISS) transistor 006aaa747 −1 006aaa748 −1 VCEsat (V) VCEsat (V) (1) (2) (3) −10−1 (1) −10−1 (2) (3) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) −10−2 −10−1 −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 10.
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PBSS305PD NXP Semiconductors 100 V, 2 A PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 14. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VCC = −9.2 V; IC = −2 A; IBon = −0.1 A; IBoff = 0.1 A Fig 15.
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PBSS305PD NXP Semiconductors 100 V, 2 A PNP low VCEsat (BISS) transistor 9. Package outline 3.1 2.7 6 3.0 2.5 1.7 1.3 1.1 0.9 5 4 2 3 0.6 0.2 pin 1 index 1 0.40 0.25 0.95 0.26 0.10 1.9 Dimensions in mm 04-11-08 Fig 16. Package outline SOT457 (SC-74) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 12
PBSS305PD NXP Semiconductors 100 V, 2 A PNP low VCEsat (BISS) transistor 11. Soldering 3.45 1.95 solder lands 0.95 solder resist 0.45 0.55 3.30 2.825 occupied area solder paste 1.60 1.70 3.10 3.20 msc422 Dimensions in mm Fig 17. Reflow soldering footprint SOT457 (SC-74) 5.30 solder lands 5.05 0.45 1.45 4.45 solder resist occupied area 1.40 msc423 4.30 Dimensions in mm Fig 18. Wave soldering footprint SOT457 (SC-74) PBSS305PD_2 Product data sheet © NXP B.V. 2009. All rights reserved.
PAGE 13
PBSS305PD NXP Semiconductors 100 V, 2 A PNP low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS305PD_2 20091208 Product data sheet - PBSS305PD_1 Modifications: PBSS305PD_1 • This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content.
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PBSS305PD NXP Semiconductors 100 V, 2 A PNP low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 15
PBSS305PD NXP Semiconductors 100 V, 2 A PNP low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .