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1. Product profile

1.1 General description

PNP low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73)

small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS306NZ.

1.2 Features and benefits

 Low collector-emitter saturation

voltage V

CEsat

 High collector current capability

and I

 High collector current gain (h

) at

high I

 High efficiency due to less heat

generation

 Smaller Printed-Circuit Board (PCB)

area than for conventional transistors

 AEC-Q101 qualified

1.3 Applications

 High-voltage DC-to-DC conversion

 High-voltage MOSFET gate driving

 High-voltage motor control

 High-voltage power switches

(e.g. motors, fans)

 Automotive applications

1.4 Quick reference data

PBSS306PZ

100 V, 4.1 A PNP low VCEsat (BISS) transistor

Rev. 3 — 26 July 2011 Product data sheet

SOT223

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter

voltage

open base - - -100 V

collector current - - -4.1 A

peak collector current single pulse; t

≤ 1ms ---8.2A

CEsat

collector-emitter

saturation resistance

=-4A; I

= -400 mA; pulsed;

≤ 300 µs; δ≤0.02 ; T

amb

=25°C

- 5680mΩ

Summary of content (15 pages)

PAGE 1
SO T2 23 PBSS306PZ 100 V, 4.1 A PNP low VCEsat (BISS) transistor Rev. 3 — 26 July 2011 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS306NZ. 1.
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PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description 1 B base 2 C collector 3 E emitter 4 C collector Simplified outline Graphic symbol 2, 4 4 1 1 2 3 3 SOT223 (SC-73) sym028 3. Ordering information Table 3. Ordering information Type number Package PBSS306PZ Name Description Version SC-73 plastic surface-mounted package with increased heatsink; 4 leads SOT223 4.
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PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 006aaa560 2.5 Ptot (W) (1) 2.0 (2) 1.5 1.0 (3) 0.5 0 −75 −25 25 75 125 175 Tamb (°C) (1) Ceramic PCB, Al2O3, standard footprint (2) FR4 PCB, mounting pad for collector 6 cm2 (3) FR4 PCB, standard footprint Fig 1. Power derating curves 6. Thermal characteristics Table 6.
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PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 006aaa561 103 Zth(j-a) (K/W) δ=1 0.75 102 0.50 0.33 0.20 0.10 0.05 10 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aaa562 102 δ=1 0.75 Zth(j-a) (K/W) 0.50 0.20 10 0.33 0.10 0.05 0.02 0.
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PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 006aaa563 102 δ=1 0.75 Zth(j-a) (K/W) 0.50 0.20 0.33 10 0.10 0.05 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 102 10 103 tp (s) Ceramic PCB, Al2O3 standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 7. Characteristics Table 7.
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PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor Table 7. Characteristics …continued Symbol Parameter Min Typ Max Unit VBEsat base-emitter saturation IC = -1 A; IB = -100 mA; pulsed; voltage tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C Conditions - -0.81 -0.9 V IC = -4 A; IB = -400 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - -0.93 -1.05 V VBEon base-emitter turn-on voltage VCE = -2 V; IC = -2 A; pulsed; tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - -0.78 -0.
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PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 006aaa646 −1.2 006aaa649 −1.2 VBE (V) VBEsat (V) −0.8 −0.8 (1) (1) (2) (2) −0.4 0 −10−1 Fig 7. −0.4 (3) −1 −10 −102 (3) 0 −10−1 −103 −104 IC (mA) −1 −10 VCE = -2 V IC/IB = 20 (1) Tamb = −55 °C (1) Tamb = −55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = 100 °C (3) Tamb = 100 °C Base-emitter voltage as a function of collector current; typical values 006aaa647 −10 Fig 8.
PAGE 8
PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 006aaa650 103 RCEsat (Ω) RCEsat (Ω) 102 102 10 10 1 1 (1) (2) (3) 10−1 10−2 −10−1 −1 −10 −102 006aaa652 103 (1) (2) (3) 10−1 −103 −104 IC (mA) 10−2 −10−1 −1 IC/IB = 20 Tamb = 25 °C (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 11.
PAGE 9
PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 VCC = -12.5 V; IC = -3 A; IBon = -0.15 A; IBoff = 0.15 A Fig 14.
PAGE 10
PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 9. Package outline Plastic surface-mounted package with increased heatsink; 4 leads D SOT223 E B A X c y HE v M A b1 4 Q A A1 1 2 3 Lp bp e1 w M B detail X e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A A1 bp b1 c D E e e1 HE Lp Q v w y mm 1.8 1.5 0.10 0.01 0.80 0.60 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 4.6 2.3 7.3 6.7 1.1 0.7 0.95 0.85 0.2 0.1 0.
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PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 10. Soldering 7 3.85 3.6 3.5 0.3 1.3 1.2 (4×) (4×) solder lands 4 solder resist 3.9 6.1 7.65 solder paste occupied area 1 2 3 Dimensions in mm 2.3 2.3 1.2 (3×) 1.3 (3×) 6.15 sot223_fr Fig 16. Reflow soldering footprint for SOT223 (SC-73) 8.9 6.7 1.9 solder lands 4 solder resist 6.2 8.7 occupied area Dimensions in mm 1 2 3 1.9 (3×) 2.7 preferred transport direction during soldering 2.7 1.1 1.
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PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS306PZ v.3 20110726 Product data sheet - PBSS306PZ v.2 Modifications: • • • • 1.2 “Features and benefits” updated In 7 “Characteristics” new parameter added, ICES Fig 15. updated 12 “Legal information” updated PBSS306PZ v.2 20091211 Product data sheet - PBSS306PZ v.1 PBSS306PZ v.
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PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 12. Legal information 12.1 Data sheet status Document status [1] [2] Product status [3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor agreement shall apply. NXP Semiconductors hereby expressly objects to applying the customer’s general terms and conditions with regard to the purchase of NXP Semiconductors products by customer.
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PBSS306PZ NXP Semiconductors 100 V, 4.1 A PNP low VCEsat (BISS) transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .1 Pinning information .