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1. Product profile

1.1 General description

PNP low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a leadless ultra small

SOT883B Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS2515MB.

1.2 Features and benefits

 Leadless ultra small SMD plastic

package

 Low package height of 0.37 mm

 Low collector-emitter saturation

voltage V

CEsat

 High collector current capability I

and

 High efficiency due to less heat

generation

 AEC-Q101 qualified

 Reduced Printed-Circuit Board (PCB)

requirements

1.3 Applications

 DC-to-DC conversion

 Supply line switching

 Battery charger

 LCD backlighting

 Driver in low supply voltage

applications (e.g. lamps and LEDs)

1.4 Quick reference data

PBSS3515MB

15 V, 0.5 A PNP low VCEsat (BISS) transistor

Rev. 1 — 6 March 2012 Product data sheet

SOT883B

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter

voltage

open base - - -15 V

collector current - - -500 mA

peak collector current single pulse; t

≤ 1ms ---1A

CEsat

collector-emitter

saturation resistance

=-500mA; I

= -50 mA; pulsed;

≤ 300 µs; δ≤0.02 ; T

amb

=25°C

- - 500 mΩ

Summary of content (12 pages)

PAGE 1
83B PBSS3515MB SO T8 15 V, 0.5 A PNP low VCEsat (BISS) transistor Rev. 1 — 6 March 2012 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless ultra small SOT883B Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS2515MB. 1.2 Features and benefits  Leadless ultra small SMD plastic package  High efficiency due to less heat generation  Low package height of 0.
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PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 B base 2 E emitter 1 3 C collector 2 Graphic symbol 3 3 1 Transparent top view SOT883B 2 sym013 3. Ordering information Table 3. Ordering information Type number Package PBSS3515MB Name Description Version - Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.37 mm SOT883B 4.
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PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
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PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1][2] - - 500 K/W [3][2] - - 212 K/W [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Reflow soldering is the only recommented soldering method.
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PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7.
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PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor mld665 600 hFE mld667 −1200 VBE (mV) (1) −1000 (1) 400 −800 (2) (2) −600 200 (3) (3) −400 0 −10−1 Fig 4. −1 −10 −102 IC (mA) -103 −200 −10−1 −1 VCE = -2 V VCE = -2 V (1) Tamb = 150 °C (1) Tamb = -55 °C (2) Tamb = 25 °C (2) Tamb = 25 °C (3) Tamb = −55 °C (3) Tamb = 150 °C DC current gain as a function of collector current; typical values mld669 −103 Fig 5.
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PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 006aac992 -1.2 IC (A) IB (mA) = -7.0 -5.6 -0.8 mld670 103 RCEsat (Ω) -6.3 102 -4.9 -4.2 -3.5 -2.8 10 -2.1 -0.4 -1.4 1 (1) -0.7 (2) 0 0 -2 -4 -6 -8 -10 VCE (V) 10-1 -10-1 -1 -10 (3) -102 IC (mA) -103 IC/IB = 20 Tamb = 25 °C (1) Tamb = 150 °C (2) Tamb = 25 °C (3) Tamb = -55 °C Fig 8. Collector current as a function of collector-emitter voltage; typical values Fig 9.
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PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 9. Package outline 0.65 0.55 0.40 0.34 0.35 1 2 0.20 0.12 0.04 max 0.30 0.22 1.05 0.65 0.95 0.30 0.22 3 0.55 0.47 Dimensions in mm 11-11-02 Fig 10. Package outline SOT883B 10. Soldering Footprint information for reflow soldering SOT883B 1.3 0.7 R0.05 (8x) 0.9 0.6 0.7 0.25 (2x) 0.3 (2x) 0.3 0.4 (2x) 0.
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PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 11. Revision history Table 8. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS3515MB v.1 20120306 Product data sheet - - PBSS3515MB Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 1 — 6 March 2012 © NXP B.V. 2012. All rights reserved.
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PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 12. Legal information 12.1 Data sheet status Document status[1] [2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor Characteristics sections of this document is not warranted. Constant or repeated exposure to limiting values will permanently and irreversibly affect the quality and reliability of the device. Terms and conditions of commercial sale — NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published athttp://www.nxp.
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PBSS3515MB NXP Semiconductors 15 V, 0.5 A PNP low VCEsat (BISS) transistor 14. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 12.1 12.2 12.3 12.4 13 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1 General description . . . . . . . . . . . . . . . . . . . . . .1 Features and benefits . . . . . . . . . . . . . . . . . . . . .1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1 Quick reference data . . . . . . . . . . . . . . . . . . . . .