DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS3515VS 15 V low VCE(sat) PNP double transistor Product data sheet Supersedes data of 2001 Nov 07 2004 Dec 23
NXP Semiconductors Product data sheet 15 V low VCE(sat) PNP double transistor FEATURES PBSS3515VS QUICK REFERENCE DATA • 300 mW total power dissipation SYMBOL • Very small 1.6 × 1.2 mm ultra thin package VCEO collector-emitter voltage −15 V • Self alignment during soldering due to straight leads ICM peak collector current −1 A • Low collector-emitter saturation voltage RCEsat equivalent on-resistance <500 mΩ PARAMETER MAX.
NXP Semiconductors Product data sheet 15 V low VCE(sat) PNP double transistor PBSS3515VS LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX.
NXP Semiconductors Product data sheet 15 V low VCE(sat) PNP double transistor PBSS3515VS CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX.
NXP Semiconductors Product data sheet 15 V low VCE(sat) PNP double transistor MLD649 600 MLD651 −1200 VBE handbook, halfpage hFE PBSS3515VS handbook, halfpage (mV) (1) −1000 (1) 400 −800 (2) (2) −600 200 (3) (3) −400 0 −10−1 −1 −10 −200 −10−1 −103 −102 IC (mA) VCE = −2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. VCE = −2 V. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values.
NXP Semiconductors Product data sheet 15 V low VCE(sat) PNP double transistor MLD654 103 handbook, halfpage PBSS3515VS MLD650 −1200 handbook, halfpage RCEsat (3) (4) IC (mA) (Ω) (2) (1) 102 (5) −800 (6) (7) 10 (8) −400 1 (9) (1) (2) 10−1 −10−1 −1 −10 (10) (3) −102 0 −103 IC (mA) −2 0 −4 −6 −8 −10 VCE (V) Tamb = 25 °C. IB = −7 mA. IB = −6.3 mA. IB = −5.6 mA. IB = −4.9 mA. IB = −4.2 mA. IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C.
NXP Semiconductors Product data sheet 15 V low VCE(sat) PNP double transistor PBSS3515VS PACKAGE OUTLINE Plastic surface-mounted package; 6 leads SOT666 D E A X Y S S HE 6 5 4 pin 1 index A 1 2 e1 c 3 bp w M A Lp e detail X 0 1 2 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp c D E e e1 HE Lp w y mm 0.6 0.5 0.27 0.17 0.18 0.08 1.7 1.5 1.3 1.1 1.0 0.5 1.7 1.5 0.3 0.1 0.1 0.
NXP Semiconductors Product data sheet 15 V low VCE(sat) PNP double transistor PBSS3515VS DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. Preliminary data sheet Qualification This document contains data from the preliminary specification. Product data sheet Production This document contains the product specification. Notes 1.
NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www.nxp.com For sales offices addresses send e-mail to: salesaddresses@nxp.com © NXP B.V. 2009 All rights are reserved.
