Datasheet

ManualsBrandsNXP SEMICONDUCTORS ManualsBJTs & IGBTsTransistor

1. Product profile

1.1 General description

PNP low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB)

small Surface-Mounted Device (SMD) plastic package.

NPN complement: PBSS4032NT.

1.2 Features

 Low collector-emitter saturation voltage V

CEsat

 Optimized switching time

 High collector current capability I

and I

 High collector current gain (h

) at high I

 High energy efficiency due to less heat generation

 AEC-Q101 qualified

 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

 DC-to-DC conversion

 Battery-driven devices

 Power management

 Charging circuits

1.4 Quick reference data

[1] Pulse test: t

≤ 300 μs; δ≤0.02.

PBSS4032PT

30 V, 2.4 A PNP low V

CEsat

(BISS) transistor

Rev. 01 — 18 December 2009 Product data sheet

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - −30 V

collector current - - −2.4 A

peak collector current single pulse;

≤ 1ms

--−5A

CEsat

collector-emitter

saturation resistance

= −2A;

= −200 mA

[1]

- 110 165 mΩ

Summary of content (14 pages)

PAGE 1
PBSS4032PT 30 V, 2.4 A PNP low VCEsat (BISS) transistor Rev. 01 — 18 December 2009 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package. NPN complement: PBSS4032NT. 1.
PAGE 2
PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 2. Pinning information Table 2. Pinning Pin Description 1 base 2 emitter 3 collector Simplified outline Graphic symbol 3 3 1 1 2 2 sym013 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PBSS4032PT - plastic surface-mounted package; 3 leads SOT23 4. Marking Table 4.
PAGE 3
PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134).
PAGE 4
PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions thermal resistance from junction to ambient Rth(j-a) in free air Min Typ Max Unit [1] - - 320 K/W [2] - - 190 K/W [3] - - 115 K/W - - 62 K/W thermal resistance from junction to solder point Rth(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
PAGE 5
PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 006aab956 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.2 0.1 0.05 10 0.02 1 0.01 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aab957 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.
PAGE 6
PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 7. Characteristics Table 7. Characteristics Tamb = 25 °C unless otherwise specified.
PAGE 7
PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 006aab966 600 (1) hFE 006aab967 −3.0 IB (mA) = −50 −45 −40 −35 IC (A) −30 −2.0 400 −25 −20 −15 (2) −10 −5 (3) −1.0 200 0 −10−1 −1 −10 −102 0.0 0.0 −103 −104 IC (mA) VCE = −2 V −1.0 −2.0 −3.0 −4.0 −5.0 VCE (V) Tamb = 25 °C (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values 006aab968 −1.8 VBE (V) Fig 6.
PAGE 8
PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 006aab970 −1 VCEsat (V) 006aab971 −1 VCEsat (V) (1) −10−1 −10−1 (1) (2) (2) (3) −10−2 −10−1 −1 −10 −102 (3) −103 −104 IC (mA) −10−2 −10−1 −1 −102 −103 −104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 9.
PAGE 9
PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 8. Test information − IB input pulse (idealized waveform) 90 % − I Bon (100 %) 10 % − I Boff output pulse (idealized waveform) − IC 90 % − I C (100 %) 10 % t td ts tr t on tf t off 006aaa266 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mgd624 Fig 14. Test circuit for switching times 8.
PAGE 10
PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 9. Package outline 3.0 2.8 1.1 0.9 3 0.45 0.15 2.5 1.4 2.1 1.2 1 2 1.9 0.48 0.38 Dimensions in mm 0.15 0.09 04-11-04 Fig 15. Package outline SOT23 (TO-236AB) 10. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
PAGE 11
PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 11. Soldering 3.3 2.9 1.9 solder lands solder resist 3 2 1.7 solder paste 0.6 (3×) 0.7 (3×) occupied area Dimensions in mm 0.5 (3×) 0.6 (3×) 1 sot023_fr Fig 16. Reflow soldering footprint SOT23 (TO-236AB) 2.2 1.2 (2×) 1.4 (2×) solder lands 4.6 solder resist 2.6 occupied area Dimensions in mm 1.4 preferred transport direction during soldering 2.8 4.5 sot023_fw Fig 17.
PAGE 12
PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 12. Revision history Table 9. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS4032PT_1 20091218 Product data sheet - - PBSS4032PT_1 Product data sheet © NXP B.V. 2009. All rights reserved. Rev.
PAGE 13
PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
PAGE 14
PBSS4032PT NXP Semiconductors 30 V, 2.4 A PNP low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 8.1 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .