Datasheet

PBSS4032PX_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved.
Product data sheet Rev. 01 — 1 April 2010 6 of 15
NXP Semiconductors
PBSS4032PX
30 V, 4.2 A PNP low V
CEsat
(BISS) transistor
7. Characteristics
[1] Pulse test: t
p
≤ 300 μs; δ≤0.02.
Table 7. Characteristics
T
amb
=25 ° C unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
CBO
collector-base cut-off
current
V
CB
= −30 V; I
E
=0A - - −100 nA
V
CB
= −30 V; I
E
=0A;
T
j
=150°C
--−50 μA
I
CES
collector-emitter
cut-off current
V
CE
= −24 V; V
BE
=0V - - −100 nA
I
EBO
emitter-base cut-off
current
V
EB
= −5V; I
C
=0A - - −100 nA
h
FE
DC current gain V
CE
= −2V
[1]
I
C
= −500 mA 200 350 -
I
C
= −1 A 200 320 -
I
C
= −2 A 150 240 -
I
C
= −4 A 60 100 -
V
CEsat
collector-emitter
saturation voltage
[1]
I
C
= −1A; I
B
= −50 mA - −110 −165 mV
I
C
= −1A; I
B
= −10 mA - −160 −240 mV
I
C
= −2A; I
B
= −40 mA - −200 −300 mV
I
C
= −4A; I
B
= −400 mA - −230 −345 mV
I
C
= −4A; I
B
= −200 mA - −270 −400 mV
R
CEsat
collector-emitter
saturation resistance
I
C
= −4A; I
B
= −400 mA
[1]
-5886mΩ
V
BEsat
base-emitter
saturation voltage
I
C
= −1A; I
B
= −50 mA
[1]
- −0.78 −0.9 V
I
C
= −4A; I
B
= −400 mA
[1]
- −1.02 −1.1 V
V
BEon
base-emitter turn-on
voltage
V
CE
= −2V; I
C
= −2A
[1]
- −0.81 −0.9 V
t
d
delay time V
CC
= −12.5 V;
I
C
= −1A; I
Bon
= −0.05 A;
I
Boff
=0.05A
-30-ns
t
r
rise time - 60 - ns
t
on
turn-on time - 90 - ns
t
s
storage time - 140 - ns
t
f
fall time - 80 - ns
t
off
turn-off time - 220 - ns
f
T
transition frequency V
CE
= −10 V;
I
C
= −100 mA;
f=100MHz
-115-MHz
C
c
collector capacitance V
CB
= −10 V;
I
E
=i
e
=0A; f=1MHz
-85-pF