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1. Product profile

1.1 General description

NPN/NPN low V

CEsat

Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8)

medium power Surface-Mounted Device (SMD) plastic package.

1.2 Features and benefits

 Low collector-emitter saturation voltage V

CEsat

 Optimized switching time

 High collector current capability I

and I

 High collector current gain (h

) at high I

 High efficiency due to less heat generation

 Smaller required Printed-Circuit Board (PCB) area than for conventional transistors

1.3 Applications

 DC-to-DC conversion

 Battery-driven devices

 Power management

 Charging circuits

1.4 Quick reference data

[1] Pulse test: t

≤ 300 μs; δ≤0.02.

PBSS4032SN

30 V, 5.7 A NPN/NPN low V

CEsat

(BISS) transistor

Rev. 2 — 13 October 2010 Product data sheet

Table 1. Product overview

Type number Package PNP/PNP

complement

NPN/PNP

complement

NXP Name

PBSS4032SN SOT96-1 SO8 PBSS4032SP PBSS4032SPN

Table 2. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

CEO

collector-emitter voltage open base - - 30 V

collector current - - 5.7 A

peak collector current single pulse;

≤ 1ms

--10A

CEsat

collector-emitter

saturation resistance

=4A; I

=0.4A

[1]

-4562.5mΩ

Summary of content (15 pages)

PAGE 1
PBSS4032SN 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor Rev. 2 — 13 October 2010 Product data sheet 1. Product profile 1.1 General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT96-1 (SO8) medium power Surface-Mounted Device (SMD) plastic package. Table 1. Product overview Type number PBSS4032SN Package NXP Name PNP/PNP complement SOT96-1 SO8 PBSS4032SP NPN/PNP complement PBSS4032SPN 1.
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PBSS4032SN NXP Semiconductors 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor 2. Pinning information Table 3. Pinning Pin Description 1 emitter TR1 2 base TR1 3 emitter TR2 4 base TR2 5 collector TR2 6 collector TR2 7 collector TR1 8 collector TR1 Simplified outline 8 Graphic symbol 8 5 7 TR1 1 4 1 6 5 TR2 2 3 4 006aaa966 3. Ordering information Table 4.
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PBSS4032SN NXP Semiconductors 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor Table 6. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions total power dissipation Tamb ≤ 25 °C Min Max Unit [1] - 0.86 W [2] - 1.4 W [3] - 2.
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PBSS4032SN NXP Semiconductors 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor 6. Thermal characteristics Table 7.
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PBSS4032SN NXP Semiconductors 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor 006aac280 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0.01 1 0 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) FR4 PCB, mounting pad for collector 1 cm2 Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac281 102 duty cycle = 1 0.75 Zth(j-a) (K/W) 0.5 0.33 0.2 10 0.1 0.05 0.02 0.
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PBSS4032SN NXP Semiconductors 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor 7. Characteristics Table 8. Characteristics Tamb = 25 °C unless otherwise specified.
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PBSS4032SN NXP Semiconductors 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor 006aac282 1000 006aac283 12.0 hFE IB (mA) = 70 IC (A) (1) 800 63 56 49 42 35 8.0 (2) 600 28 21 14 400 (3) 4.0 7 200 0 10−1 1 10 102 0.0 0.0 103 104 IC (mA) 1.0 2.0 3.0 4.0 5.0 VCE (V) Tamb = 25 °C VCE = 2 V (1) Tamb = 100 °C (2) Tamb = 25 °C (3) Tamb = −55 °C Fig 5. DC current gain as a function of collector current; typical values Fig 6. 006aac284 1.
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PBSS4032SN NXP Semiconductors 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor 006aac286 1 006aac287 1 VCEsat (V) VCEsat (V) 10−1 10−1 (1) (1) (2) (2) (3) 10−2 10−1 1 10 (3) 102 103 104 IC (mA) 10−2 10−1 1 102 103 104 IC (mA) Tamb = 25 °C IC/IB = 20 (1) Tamb = 100 °C (1) IC/IB = 100 (2) Tamb = 25 °C (2) IC/IB = 50 (3) Tamb = −55 °C (3) IC/IB = 10 Fig 9. 10 Collector-emitter saturation voltage as a function of collector current; typical values 006aac288 103 Fig 10.
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PBSS4032SN NXP Semiconductors 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor 8. Test information IB input pulse (idealized waveform) 90 % IBon (100 %) 10 % IBoff output pulse (idealized waveform) IC 90 % IC (100 %) 10 % t td ts tr ton tf toff 006aaa003 Fig 13. BISS transistor switching time definition VBB RB VCC RC Vo (probe) oscilloscope 450 Ω (probe) 450 Ω oscilloscope R2 VI DUT R1 mlb826 VCC = 12.5 V; IC = 1 A; IBon = 0.05 A; IBoff = −0.05 A Fig 14.
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PBSS4032SN NXP Semiconductors 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor 9. Package outline 5.0 4.8 1.75 1.0 0.4 6.2 5.8 4.0 3.8 pin 1 index 1.27 0.49 0.36 Dimensions in mm 0.25 0.19 03-02-18 Fig 15. Package outline SOT96-1 (SO8) 10. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code.
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PBSS4032SN NXP Semiconductors 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor 11. Soldering 5.50 0.60 (8×) 1.30 4.00 6.60 7.00 1.27 (6×) solder lands occupied area placement accuracy ± 0.25 Dimensions in mm sot096-1_fr Fig 16. Reflow soldering footprint SOT96-1 (SO8) 1.20 (2×) 0.60 (6×) enlarged solder land 0.3 (2×) 1.30 4.00 6.60 7.00 1.27 (6×) 5.50 board direction solder lands occupied area solder resist placement accurracy ± 0.25 Dimensions in mm sot096-1_fw Fig 17.
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PBSS4032SN NXP Semiconductors 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor 12. Revision history Table 10. Revision history Document ID Release date Data sheet status Change notice Supersedes PBSS4032SN v.2 20101013 Product data sheet - PBSS4032SN v.1 Modifications: PBSS4032SN v.1 PBSS4032SN Product data sheet • Figure 1 “Per device: Power derating curves”: updated. 20100714 Product data sheet - All information provided in this document is subject to legal disclaimers. Rev.
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PBSS4032SN NXP Semiconductors 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor 13. Legal information 13.1 Data sheet status Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
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PBSS4032SN NXP Semiconductors 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor Quick reference data — The Quick reference data is an extract of the product data given in the Limiting values and Characteristics sections of this document, and as such is not complete, exhaustive or legally binding. 13.4 Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 14. Contact information For more information, please visit: http://www.
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PBSS4032SN NXP Semiconductors 30 V, 5.7 A NPN/NPN low VCEsat (BISS) transistor 15. Contents 1 1.1 1.2 1.3 1.4 2 3 4 5 6 7 8 9 10 11 12 13 13.1 13.2 13.3 13.4 14 15 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . .